Light emitting device and light emitting apparatus having the same

ABSTRACT

A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure under the transmissive substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode and including a ceramic-based thermal diffusion agent.

The present application claims priority under 35 U.S.C. §119(a) ofKorean Patent Application No. 10-2011-0119823 filed on Nov. 16, 2011,which is hereby incorporated by reference in its entirety.

BACKGROUND

The embodiment relates to a light emitting device and a light emittingapparatus having the same.

Groups III-V nitride semiconductors have been extensively used as mainmaterials for light emitting devices, such as a light emitting diode(LED) or a laser diode (LD), due to the physical and chemicalcharacteristics thereof. In general, the groups III-V nitridesemiconductors include a semiconductor material having a compositionalformula of In_(x)Al_(y)Ga_(1−x−y)N (0≦x≦1, 0≦y≦1, and 0≦x+y≦1).

The LED is a semiconductor device, which transmits/receives signals byconverting an electric signal into infrared ray or light using thecharacteristics of compound semiconductors. The LED is also used as alight source.

The LED or the LD using the nitride semiconductor material is mainlyused for the light emitting device to provide the light. For instance,the LED or the LD is used as a light source for various products, suchas a keypad light emitting part of a cellular phone, an electricsignboard, and a lighting device.

SUMMARY

The embodiment provides a light emitting device having a novel lightextracting structure.

The embodiment provides a light emitting device including aconcavo-convex pattern having micro concavo-convex portions on a topsurface of a substrate.

The embodiment provides a light emitting device including aconcavo-convex pattern having micro concavo-convex portions on a topsurface of a light emitting structure.

The embodiment provides a wafer-level packaged light emitting device.

The embodiment provides a light emitting device including a supportmember having a ceramic-based additive formed on a peripheral surface ofan electrode connected to a light emitting structure and a method ofmanufacturing the same.

The embodiment provides a light emitting apparatus having the lightemitting device, a light emitting device package and a lighting device.

A light emitting device according to the embodiment includes atransmissive substrate; a first pattern portion disposed on a topsurface of the transmissive substrate and including a plurality ofprotrusions; a second pattern portion disposed on the top surface of thetransmissive substrate and including a plurality of concaves each ofwhich has a width smaller than a width of each protrusion; a lightemitting structure disposed under the transmissive substrate andincluding a first conductive semiconductor layer, a second conductivesemiconductor layer and an active layer between the first and secondconductive semiconductor layers; a first electrode under the firstconductive semiconductor layer; a reflective electrode layer under thesecond conductive semiconductor layer; a second electrode under thereflective electrode layer; a first connection electrode under the firstelectrode; a second connection electrode under the second electrode; andan insulating support member disposed around the first electrode and thefirst connection electrode and around the second electrode and thesecond connection electrode and including a ceramic-based thermaldiffusion agent.

A light emitting device according to the embodiment includes a firstconductive semiconductor layer; an active layer under the firstconductive semiconductor layer; a second conductive semiconductor layerunder the active layer; a first pattern portion disposed on a topsurface of the first conductive semiconductor layer and including aplurality of protrusions; a second pattern portion disposed on the topsurface of the first conductive semiconductor layer and including aplurality of concaves each of which has a width smaller than a width ofeach protrusion; a first electrode under the first conductivesemiconductor layer; a reflective electrode layer under the secondconductive semiconductor layer; a second electrode under the reflectiveelectrode layer; a first connection electrode under the first electrode;a second connection electrode under the second electrode; and aninsulating support member disposed around the first electrode and thefirst connection electrode and around the second electrode and thesecond connection electrode and including a ceramic-based thermaldiffusion agent.

A light emitting apparatus according to the embodiment includes a lightemitting device including a support member formed at a lower portion ofthe light emitting device and first and second connection electrodesexposed to a bottom surface of the support member; a plurality of leadframes on which the first and second connection electrodes of the lightemitting device are mounted; and a body on which the lead frames areinstalled, wherein the light emitting device includes a transmissivesubstrate; a first pattern portion disposed on a top surface of thetransmissive substrate and including a plurality of protrusions; asecond pattern portion disposed on the top surface of the transmissivesubstrate and including a plurality of concaves each of which has awidth smaller than a width of each protrusion; a light emittingstructure disposed under the transmissive substrate and including afirst conductive semiconductor layer, a second conductive semiconductorlayer and an active layer between the first and second conductivesemiconductor layers; a first electrode between the first conductivesemiconductor layer and the first connection electrode; a reflectiveelectrode layer under the second conductive semiconductor layer; and asecond electrode between the reflective electrode layer and the secondconnection electrode, and wherein the support member is disposed aroundthe first electrode and the first connection electrode and around thesecond electrode and the second connection electrode and including aceramic-based thermal diffusion agent, and the first and secondconnection electrodes of the light emitting device and the bottomsurface of the support member have an interval corresponding to a topsurface of the lead frames.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side sectional view of a light emitting device according tothe first embodiment;

FIG. 2 is a bottom view of the light emitting device shown in FIG. 1;

FIGS. 3 to 9 are sectional views showing the manufacturing process forthe light emitting device according to the first embodiment;

FIG. 10 is a side sectional view of a light emitting apparatus havingthe light emitting device shown in FIG. 1;

FIG. 11 is a side sectional view of a light emitting device according tothe second embodiment;

FIG. 12 is a side sectional view of a light emitting device according tothe third embodiment;

FIGS. 13 and 14 are a side sectional view and a bottom view of a lightemitting device according to the fourth embodiment, respectively;

FIGS. 15 and 16 are a side sectional view and a bottom view of a lightemitting device according to the fifth embodiment, respectively;

FIG. 17 is a side sectional view of a light emitting device according tothe sixth embodiment;

FIG. 18 is a side sectional view of a light emitting device according tothe seventh embodiment;

FIG. 19 is a side sectional view of a light emitting device according tothe eighth embodiment;

FIG. 20 is a side sectional view of a light emitting device according tothe ninth embodiment;

FIG. 21 is a view showing an example of a reflective electrode layer anda second electrode pad of FIG. 20;

FIG. 22 is a view showing an example of a second electrode bonding layerof FIG. 20;

FIG. 23 is a view showing an example of a first electrode bonding layerof FIG. 20;

FIG. 24 is a view showing another example of a second electrode bondinglayer of FIG. 20;

FIG. 25 is a view showing a light emitting device package having thelight emitting device of FIG. 1;

FIG. 26 is a side sectional view of a light emitting device according tothe tenth embodiment;

FIGS. 27 to 29 are views showing the manufacturing process for the lightemitting device shown in FIG. 26;

FIG. 30 is a side sectional view of a light emitting apparatus havingthe light emitting device shown in FIG. 26;

FIG. 31 is a side sectional view of a light emitting device according tothe eleventh embodiment;

FIG. 32 is a side sectional view of a light emitting device according tothe twelfth embodiment;

FIGS. 33 and 34 are a side sectional view and a bottom view of a lightemitting device according to the thirteenth embodiment, respectively;

FIGS. 35 and 36 are a side sectional view and a bottom view of a lightemitting device according to the fourteenth embodiment, respectively;

FIG. 37 is a side sectional view of a light emitting device according tothe fifteenth embodiment;

FIG. 38 is a side sectional view of a light emitting device according tothe sixteenth embodiment;

FIG. 39 is a side sectional view of a light emitting device according tothe seventeenth embodiment;

FIG. 40 is a side sectional view of a light emitting device according tothe eighteenth embodiment; and

FIG. 41 is a sectional view showing a light emitting device packagehaving the light emitting device of FIG. 26.

FIG. 42 is a perspective view showing a display apparatus having thelight emitting device according to the embodiment;

FIG. 43 is a sectional view showing a display apparatus according to theembodiment; and

FIG. 44 is an exploded perspective view showing of a lighting unithaving the light emitting device according to the embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

In the description of the embodiments, it will be understood that, whena layer (or film), a region, a pattern, or a structure is referred to asbeing “on” or “under” another substrate, another layer (or film),another region, another pad, or another pattern, it can be “directly” or“indirectly” on the other substrate, layer (or film), region, pad, orpattern, or one or more intervening layers may also be present. Such aposition of the layer has been described with reference to the drawings.

The thickness and size of each layer shown in the drawings may beexaggerated, omitted or schematically drawn for the purpose ofconvenience or clarity. In addition, the size of elements does notutterly reflect an actual size.

Hereinafter, embodiments will be described with reference toaccompanying drawings.

FIG. 1 is a side sectional view of a light emitting device according tothe first embodiment, and FIG. 2 is a bottom view of the light emittingdevice shown in FIG. 1.

Referring to FIGS. 1 and 2, the light emitting device 100 includes asubstrate 111, a first semiconductor layer 113, a first conductivesemiconductor layer 115, an active layer 117, a second conductivesemiconductor layer 119, a reflective electrode layer 131, an insulatinglayer 133, a first electrode 135, a second electrode 137, a firstconnection electrode 141, a second connection electrode 143, and asupport member 151.

The substrate 111 may include a transmissive substrate, an insulatingsubstrate or a conductive substrate. For instance, the substrate 111 mayinclude at least one of Al₂O₃, SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP,Ge, and Ga₂O₃. A light extracting structure, such as a concavo-convexpattern, may be disposed on a bottom surface of the substrate 111. Theconcavo-convex pattern can make contact with the first semiconductorlayer 113. The concavo-convex pattern can be formed by a concavo-convexstructure disposed on a bottom surface of the substrate 111 or can beformed as a roughness pattern. The concavo-convex pattern may have astripe shape or a convex lens shape.

The substrate 111 is disposed on a top surface S1 thereof with a firstpattern portion having a first concavo-convex structure including aplurality of protrusions 11 and a second pattern portion having a secondconcavo-convex structure disposed on the first concavo-convex structureand including a plurality of concaves 12. The second concavo-convexstructure is disposed on the first concavo-convex structure and definedby a micro concavo-convex configuration having a size smaller than asize of the protrusions 11.

The protrusions 11 can be formed by etching the top surface S1 of thesubstrate 111, so the protrusions 11 may be formed by using a materialthe same as that of the substrate 111. The second pattern portion can beformed by etching the top surface S1 and the protrusions 11 of thesubstrate 111 or can be formed by using a separate material.

The protrusions 11 of the first pattern portion may protrude from thetop surface S1 of the substrate 111 or may have an embossing shape. Thetop surface S1 of the substrate 111 may be recessed relative to theprotrusions 11. In addition, the first pattern portion may be recessedor engraved lower than the top surface S1 of the substrate 111.

The concaves 12 of the second pattern portion may be disposed on thesurface of the protrusions 11 and the top surface S1 of the substrate111 with a size smaller than a size of the protrusions 11. The concaves12 may have an intaglio shape, a recess shape or a depressed shape. Inaddition, the second pattern portion may have an embossing shape or aconvex shape and may be formed with micro protrusions having a sizesmaller than that of the protrusions 11.

The first pattern portion includes the concavo-convex structureincluding the protrusions 11 having the embossing shape and the topsurface S1 having the intaglio shape, and the second pattern portionincludes micro concavo-convex structure disposed on the firstconcavo-convex structure and having the intaglio shape and/or theembossing shape with a width smaller than a width of the protrusions 11.

When viewed from the top of the substrate 111, the protrusions 11 of thefirst pattern portion may be arranged in the form of a matrix or alattice.

For the purpose of convenience of explanation, according to the firstembodiment, the first pattern portion will be described as protrusions11 and the second pattern portion will be described as concaves 12, butthe embodiment is not limited thereto.

The first semiconductor layer 113 is disposed on the bottom surface ofthe substrate 111. A plurality of protrusions 11 protrude upward fromthe top surface S1 of the substrate 111, which is opposite to the bottomsurface of the substrate 111, and the concaves 12 are formed in theprotrusions 11. The protrusions 11 may have a side sectional shape of ahemisphere, a cone, a polygonal cone, a column such as a cylinder or apolygonal column, or a truncated cone. When viewed from the top, eachprotrusion 11 may have a circular shape, a polygonal shape, or a mixedshape of a sphere and a surface.

The concaves 12 are concaved down with respect to the surface of eachprotrusion 11. The concaves 12 may have a side sectional shape of ahemisphere, a cone, a polygonal cone, a column such as a cylinder or apolygonal column, or a truncated cone. When viewed from the top, eachconcave 12 may have a circular shape, a polygonal shape, or a mixedshape of a sphere and a surface. The concaves 12 may be concaved downfrom the top surface S1 of the substrate 111. A width C2 of the concave12 may be smaller than a width B1 of the protrusion 11.

A depth C1 or the width C2 of the concave 12 may be equal to or smallerthan 50% based on a height L2 or the width B1 of the protrusion 11. Forinstance, the depth C1 or the width C2 of the concave 12 may be in therange of ½ to 1/100 based on the height L2 or the width B1 of theprotrusion 11. The widths C2 and B1 may be the maximum width.

The size of the concaves 12 or micro concavo-convex structures may beequal to or smaller than 50% based on the size of the protrusion 11. Thewidth B1 of the protrusion 11 may be at least one of a maximum width, alength of one lateral side, a radius, a thickness and a height L2 of theprotrusion 11 and the size of the concave 12 may be at least one of amaximum width, a length of each lateral side, a height, a radius and athickness of the concave 12.

The width B1 or the height L2 of the protrusion 11 may be in the rangeof 0.1 μm to 10 μm, for instance, may be smaller than the thickness ofthe substrate 111. The width B1 of the protrusion 11 may be larger thanthe height L2 of the protrusion 11, but the embodiment is not limitedthereto. The depth C1 or the width C2 of the concave 12 is in the rangeof 0.1 nm to 100 nm or 0.1 nm to 100 μm. A pitch L1 between twoprotrusions 12 may be in the range of 0.1 μm to 100 μm, and a pitchbetween two concaves 12 may be ½ or less based on the pitch L1 of theprotrusions 11, for instance, in the range of 0.1 μm to 100 μm.

The protrusions 11 may change the critical angle of light incidentthrough the substrate 111 and the concaves 12 may change the criticalangle of light incident onto the protrusions 11 and the top surface S1of the substrate 111. If the first and second patterns are disposed onthe substrate 111 with different sizes from each other, the totalreflection rate of the incident light may be lowered so that the lightextraction efficiency can be improved.

The protrusions 11 may be arranged in a regular interval or a randominterval. In addition, the concaves 12 may be arranged in a regularinterval or a random interval.

The first semiconductor layer 113 may be disposed on the bottom surfaceof the substrate 111. The first semiconductor layer 113 may include agroup II to VI compound semiconductor. In detail, the firstsemiconductor layer 113 can be formed in a single layer or multiplelayers by using the group II-VI or group III-V compound semiconductor.For instance, the first semiconductor layer 113 may include a groupIII-V compound semiconductor including at least one of GaN, InN, AlN,InGaN, AlGaN, InAlGaN and AlInN. The first semiconductor layer 113 mayinclude an oxide, such as ZnO, but the embodiment is not limitedthereto.

The first semiconductor layer 113 may be prepared as a buffer layer. Thebuffer layer can reduce the lattice mismatch between the substrate 111and the nitride semiconductor layer.

The first semiconductor layer 113 may be prepared as a first conductivesemiconductor layer or an undoped semiconductor layer. The undopedsemiconductor layer may be prepared as a GaN-based semiconductor layerincluding the group III-V compound semiconductor. The undopedsemiconductor layer may have a first conductive property even if theconductive dopant is not intentionally added in the manufacturingprocess. In addition, the undoped semiconductor layer has a dopantconcentration lower than that of the conductive dopant of the firstconductive semiconductor layer 115.

The first semiconductor layer 113 may include at least one of the bufferlayer and the undoped semiconductor layer, but the embodiment is notlimited thereto. In addition, the first semiconductor layer 113 may beomitted.

A light emitting structure 120 may be formed under the firstsemiconductor layer 113. The light emitting structure 120 includes thegroup III-V compound semiconductor. For instance, the light emittingstructure 120 includes the semiconductor having the compositionalformula of In_(x)Al_(y)Ga_(1−x−y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and can emitthe light having a predetermined peak wavelength in the wavelength rangeof an ultraviolet ray band to a visible ray band.

The light emitting structure 120 includes a first conductivesemiconductor layer 115, a second conductive semiconductor layer 119,and an active layer 117 between the first conductive semiconductor layer115 and the second conductive semiconductor layer 119.

The first conductive semiconductor layer 115 is formed under thesubstrate 111 or the first semiconductor layer 113. The first conductivesemiconductor layer 115 may include a group III-V compound semiconductordoped with a first conductive dopant. The first conductive semiconductorlayer 115 is an n type semiconductor layer and the first conductivedopant is an n type dopant including Si, Ge, Sn, Se or Te.

A superlattice structure including various semiconductor layersalternately stacked on each other may be formed between the firstconductive semiconductor layer 115 and the first semiconductor layer113. The superlattice structure may reduce the lattice defect. Eachlayer of the superlattice structure may have a thickness of about few Åor more.

A first conductive clad layer is formed between the first conductivesemiconductor layer 115 and the active layer 117. The first conductiveclad layer may include a GaN-based semiconductor and have a bandgaphigher than that of the active layer 117. The first conductive cladlayer confines the carriers.

The active layer 117 is formed under the first conductive semiconductorlayer 115. The active layer 117 selectively includes a single quantumwell structure, a multiple quantum well structure, a quantum wirestructure or a quantum dot structure and may have a periodicity of thewell layer and the barrier layer. The well layer may have acompositional formula of In_(x)Al_(y)Ga_(1−x−y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1)and the barrier layer may have a compositional formula ofIn_(x)Al_(y)Ga_(1−x−y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1).

The well layer/barrier layer may have at least one periodicity by usingthe stack structure of InGaN/GaN, AlGaN/GaN, InGaN/AlGaN, orInGaN/InGaN. The barrier layer may include a semiconductor materialhaving a bandgap higher than that of the well layer.

The second conductive semiconductor layer 119 is formed under the activelayer 117. The second conductive semiconductor layer 119 may include asemiconductor doped with a second conductive dopant. For instance, thesecond conductive semiconductor layer 119 may include a compoundsemiconductor, such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN.The second conductive semiconductor layer 119 is a p type semiconductorlayer and the second conductive dopant is a p type dopant, such as Mg,Zn, Ca, Sr or Ba.

The second conductive semiconductor layer 119 may include a superlatticestructure, such as InGaN/GaN or AlGaN/GaN. The superlattice structure ofthe second conductive semiconductor layer 119 may diffuse the currentabnormally contained in the voltage, thereby protecting the active layer117.

In addition, in the light emitting structure 120, the first conductivesemiconductor layer 115 may be prepared as a p type semiconductor layerand the second conductive semiconductor layer 119 may be prepared as ann type semiconductor layer. A third conductive semiconductor layerhaving polarity opposite to that of the second conductive semiconductorlayer 119 may be disposed on the second conductive semiconductor layer119.

The light emitting structure 120 of the light emitting device 100 may bedefined by the first conductive semiconductor layer 115, the activelayer 117 and the second conductive semiconductor layer 119. The lightemitting structure 120 may have one of an n-p junction structure, a p-njunction structure, an n-p-n junction structure, and a p-n-p junctionstructure. In this case, the symbols “n” and “p” represent n and p typesemiconductor layers, respectively, and the symbol “-” represents thattwo layers are directly or indirectly stacked on each other.Hereinafter, the second conductive semiconductor layer 119 will bereferred to as the uppermost layer of the light emitting structure 120for the purpose of convenience of explanation.

The reflective electrode layer 131 is formed under the second conductivesemiconductor layer 119. For instance, the reflective electrode layer131 may have a single layer structure or a multi-layer structure. If thereflective electrode layer 131 has the multi-layer structure, thereflective electrode layer 131 includes at least one of an ohmic contactlayer, a reflective layer, a diffusion barrier layer and a protectivelayer. The reflective electrode layer 131 may include the structure ofthe ohmic contact layer/reflective layer/diffusion barrierlayer/protective layer, the reflective layer/diffusion barrierlayer/protective layer, the ohmic contact layer/reflectivelayer/protective layer, the reflective layer/diffusion barrier, or thereflective layer. The structure of the reflective electrode layer 131will be described in detail with reference to FIG. 21.

The reflective electrode layer 131 may include the stack structure of atransmissive electrode layer/a reflective layer. The transmissiveelectrode layer may include one selected from the group consisting ofITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tinoxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zincoxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO(antimony tin oxide), GZO (gallium zinc oxide), SnO, InO, InZnO, ZnO,IrOx, and RuOx. The reflective layer may be formed under thetransmissive electrode layer. The reflective layer includes a firstlayer having a first refractive index and a second layer having a secondrefractive index. The reflective layer may include the stack structurein which at least two pairs of the first and second layers arealternately stacked. The first refractive index is different from thesecond refractive index and the first and second layers may include amaterial having the refractive index in the range of 1.5 to 2.4. Forinstance, the first and second layers may include a conductive materialor an insulating material. Such a structure may be defined as a DBR(Distributed Bragg Reflection) structure.

A light extracting structure, such as a roughness, can be disposed on asurface of at least one of the second conductive semiconductor layer 119and the reflective electrode layer 131. The light extracting structuremay vary the critical angle of the incident light to improve the lightextraction efficiency.

A first electrode 135 is formed under a predetermined region A1 of thefirst conductive semiconductor layer 115 and a second electrode 137 isformed under the reflective electrode layer 131. A first connectionelectrode 141 is formed under the first electrode 135 and a secondconnection electrode 143 is formed under the second electrode 137.

The first electrode 135 is electrically connected to the predeterminedregion A1 of the first conductive semiconductor layer 115. The firstelectrode 135 may include an electrode pad, but the embodiment is notlimited thereto.

The first electrode 135 is spaced apart from the lateral sides of theactive layer 117 and the second conductive semiconductor layer 119 andhas an area smaller than the predetermined region A1 of the firstconductive semiconductor layer 115.

The second electrode 137 can be physically and/or electrically connectedto the second conductive semiconductor layer 119 through the reflectiveelectrode layer 131. The second electrode 137 includes an electrode pad.

The first and second electrodes 135 and 137 may have a single layerstructure or a multi-layer structure. In the case of the multi-layerstructure, the first and second electrodes 135 and 137 may include atleast one of an adhesive layer, a reflective layer, a diffusion barrierlayer and a bonding layer. The adhesive layer makes ohmic-contact with abottom surface of the predetermined region A1 of the first conductivesemiconductor layer 115. The adhesive layer may include one selectedfrom the group consisting of Cr, Ti, Co, Ni, V, Hf and an alloy thereofand have a thickness of about 1 to 1,000 Å. The reflective layer isformed under the adhesive layer and includes one selected from the groupconsisting of Ag, Al, Ru, Rh, Pt, Pd and an alloy thereof. Thereflective layer has a thickness of about 1 to 10,000 Å. The diffusionbarrier layer is formed under the reflective layer and includes oneselected from the group consisting of Ni, Mo, W, Ru, Pt, Pd, La, Ta, Tiand an alloy thereof. The diffusion barrier layer has a thickness ofabout 1 to 10,000 Å. The bonding layer is bonded to the first connectionelectrode 141 and includes one selected from the group consisting of Al,Ru, Rh, Pt and an alloy thereof. The bonding layer has a thickness ofabout 1 to 10,000 Å.

The first and second electrodes 135 and 137 may have the same stackstructure or different stack structures. The stack structure of thesecond electrode 137 may be smaller than the stack structure of thefirst electrode 135. For instance, the first electrode 135 may have thestack structure of the adhesive layer/reflective layer/diffusion barrierlayer/bonding layer or the adhesive layer/diffusion barrierlayer/bonding layer, and the second electrode 137 may have the stackstructure of the adhesive layer/reflective layer/diffusion barrierlayer/bonding layer or the adhesive layer/diffusion barrierlayer/bonding layer.

A top surface area of the second electrode 137 is equal to a bottomsurface area of the reflective electrode layer 131 or at least largerthan a top surface area of the second connection electrode 143.

At least one of the first and second electrodes 135 and 137 may includea current diffusion pattern having an arm structure or a fingerstructure branching from the electrode pad. In addition, the first andsecond electrodes 135 and 137 may include one electrode pad or aplurality of electrode pads, but the embodiment is not limited thereto.

The first and second connection electrodes 141 and 143 may serve as alead for supplying power and a heat dissipation path. The first andsecond connection electrodes 141 and 143 may have a column shape. Forinstance, the first and second connection electrodes 141 and 143 mayhave a spherical shape, a cylindrical shape, a polygonal column shape ora random shape. The polygonal column shape may be an equiangular columnshape or not, and the embodiment is not limited thereto. The top andbottom surfaces of the first and second connection electrodes 141 and143 may have a circular shape or a polygonal shape, but the embodimentis not limited thereto. The bottom surface area of the first and secondconnection electrodes 141 and 143 may be different from the top surfacearea of the first and second connection electrodes 141 and 143. Forinstance, the bottom surface area of the first and second connectionelectrodes 141 and 143 may be larger or smaller than the top surfacearea of the first and second connection electrodes 141 and 143.

At least one of the first and second connection electrodes 141 and 143is smaller than a width of a bottom surface of the light emittingstructure 120 and larger than a diameter or a width of a bottom surfaceof the first and second electrodes 135 and 137.

The diameter or the width of the first and second connection electrodes141 and 143 is in the range of 1 μm˜100,000 μm and the height of firstand second connection electrodes 141 and 143 is in the range of 1μm˜100,000 μm. The height H1 of the first connection electrode 141 maybe longer than the height H2 of the second connection electrode 143 andbottom surfaces of the first and second connection electrodes 141 and143 may be aligned on the same plane (that is, horizontal plane).

The first and second connection electrodes 141 and 143 may be preparedas a single layer by using one metal or an alloy. The width and theheight of the single layer is in the range of 1 μm˜100,000 μm. Forinstance, the single layer has the thickness larger than the thicknessof the second connection electrode 143. The first and second connectionelectrodes 141 and 143 may further include at least one protective layercoated or plated on a surface of a metal or an alloy, but the embodimentis not limited thereto.

The first and second connection electrodes 141 and 143 may include oneselected from the group consisting of Ag, Al, Au, Cr, Co, Cu, Fe, Hf,In, Mo, Ni, Si, Sn, Ta, Ti, W and an alloy thereof. In order to improvethe adhesive strength with respect to the first and second electrodes135 and 137, the first and second connection electrodes 141 and 143 maybe plated with a metal including one selected from the group consistingof In, Sn, Ni, Cu and an alloy thereof. At this time, the platingthickness may be in the range of 1˜100,000 Å.

At least one plating layer can be further disposed on the surfaces ofthe first and second connection electrodes 141 and 143. The platinglayer may include Tin or an alloy thereof, Ni or an alloy thereof, or aTin-Ag—Cu alloy. At this time, the plating layer may have a thickness ofabout 0.5 μm˜10 μm. The plating layer can improve the bonding strengthwith respect to other bonding layers.

The insulating layer 133 may be formed under the reflective electrodelayer 131. In detail, the insulating layer 133 can be disposed on thebottom surface of the second conductive semiconductor layer 119, lateralsides of the second conductive semiconductor layer 119 and the activelayer 117, and the bottom surface of the predetermined region A1 of thefirst conductive semiconductor layer 115. The insulating layer 133 isdisposed on the lower region of the light emitting structure 120 exceptfor the region for the reflective electrode layer 131, the firstelectrode 135 and the second electrode 137 to electrically protect thelower portion of the light emitting structure 120.

The insulating layer 133 includes an insulating material or aninsulating resin formed by using oxide, nitride, fluoride or sulfideincluding at least one of Al, Cr, Si, Ti, Zn and Zr. For instance, theinsulating layer 133 may include one selected from the group consistingof SiO₂, Si₃N₄, Al₂O₃ and TiO₂. The insulating layer 133 may be preparedas a single layer or multiple layers, but the embodiment is not limitedthereto. The insulating layer 133 prevents the layer-to-layer short ofthe light emitting structure 120 when a metal structure is formed underthe light emitting structure for the purpose of flip bonding.

The insulating layer 133 may not be disposed on the bottom surface ofthe reflective electrode layer 131. Since the support member 151 havingthe insulating property is disposed on the bottom surface of thereflective electrode layer 131, the insulating layer 133 may not need toextend to the bottom surface of the reflective electrode layer 131.

The insulating layer 133 has the DBR structure in which the first andsecond layers having refractive indexes different from each other arealternately aligned. In detail, the first layer includes one of SiO₂,Si₃N₄, Al₂O₃, and TiO₂ and the second layer includes materials exceptfor the materials of the first layer. In this case, the reflectiveelectrode layer may be omitted.

The insulating layer 133 may have the thickness in the range of 100 to10,000 Å. If the insulating layer 133 is prepared as the multiplelayers, each layer may have the thickness in the range of 1 to 50,000 Åor 100 to 10,000 Å. The thickness of each layer of the insulating layer133 having the multiple layers may vary the reflective efficiencyaccording to the emission wavelength.

The first and second connection electrodes 141 and 143 may include Ag,Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and an alloythereof. In addition, the first and second connection electrodes 141 and143 may have a plating layer including In, Sn, Ni, Cu and an alloythereof to improve the adhesive strength with respect to the first andsecond electrodes 135 and 137. In this case, the plating layer has thethickness in the range of 1˜100,000 Å. The first and second connectionelectrodes 141 and 143 may be bonded through eutectic bonding and usedas a solder ball or a metal bump, but the embodiment is not limitedthereto.

The first and second connection electrodes 141 and 143 may include Ag,Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and an alloythereof. In addition, the first and second connection electrodes 141 and143 may have a plating layer including In, Sn, Ni, Cu and an alloythereof to improve the adhesive strength with respect to the first andsecond electrodes 135 and 137. In this case, the plating layer has thethickness in the range of 1˜100,000 Å. The first and second connectionelectrodes 141 and 143 may be used as a single metal, such as a solderball or a metal bump, but the embodiment is not limited thereto.

The support member 151 serves as a support layer to support the lightemitting device 100. The support member 151 includes an insulatingmaterial. For instance, the insulating material may be a resin includingsilicon or epoxy. In addition, the insulating material may include pasteor insulating ink. The insulating material may also include a resinselected from the group consisting of a polyacrylate resin, an epoxyresin, a phenolic resin, a polyamides resin, a polyimide resin, anunsaturated polyesters resin, a polyphenylene ether resin (PPE), apolyphenylene oxide resin (PPO), a polyphenylene sulfides resin, acyanate ester resin, benzocyclobutene (BCB), Polyamido-amine Dendrimers(PAMAM), Polypropylene-imine, Dendrimers (PPI), PAMAM-OS (organosilicon)having an internal structure of PAMAM and an outer surface oforganosilicon, and a combination thereof. The material for the supportmember 151 may be different from the material for the insulating layer133.

At least one of compounds, such as oxide, nitride, fluoride or sulfideincluding at least one of Al, Cr, Si, Ti, Zn and Zr, can be added to thesupport member 151. The compound added to the support member 151 may bea thermal diffusion agent. The thermal diffusion agent is a powderparticle having a predetermined size, a grain, filler or an additive. Inthe following description, the support member 151 including the thermaldiffusion agent will be described for the purpose of convenience of theexplanation. The thermal diffusion agent may include an insulatingmaterial or a conductive material having a size of 1 Å˜100,000 Å. Inorder to improve the thermal diffusion efficiency, the thermal diffusionagent may have a size of 1,000 Å˜50,000 Å. The grain of thermaldiffusion agent may have a spherical shape or an irregular shape, butthe embodiment is not limited thereto.

The thermal diffusion agent includes a ceramic material. The ceramicmaterial includes at least one of LTCC (low temperature co-firedceramic), HTCC (high temperature co-fired ceramic), alumina, quartz,calcium zirconate, forsterite, SiC, graphite, fused-silica, mullite,cordierite, zirconia, beryllia, and aluminum nitride. The ceramicmaterial may include metal nitride having thermal conductivity higherthan that of nitride or oxide. For instance, the metal nitride mayinclude a material having the thermal conductivity equal to or higherthan 140 W/mK. For example, the ceramic material includes one selectedfrom the group consisting of SiO₂, Si_(x)O_(y), Si₃N₄, Si_(x)N_(y),SiO_(x)N_(y), Al₂O₃, BN, Si₃N₄, SiC(SiC—BeO), BeO, CeO, and AlN. Thethermal conductive material may include C-component, such as diamond orCNT.

The support member 151 can be prepared as a single layer or multiplelayers, and the embodiment is not limited thereto. The support member151 is provided therein with ceramic powder, so the strength and thethermal conductivity of the support member 151 can be improved.

In addition, the amount of the thermal diffusion agent added to thesupport member 151 may be 1˜99 wt %. In order to improve the thermaldiffusion efficiency, 50˜99 wt % of the thermal diffusion agent can beadded to the support member 151. Since the thermal diffusion agent isadded to the support member 151, the thermal conductivity can be moreimproved at the interior of the support member 151. In addition, thesupport member 151 has the thermal expansion coefficient of 4-11[x10⁶/°C.]. The above thermal expansion coefficient is equal or similar to thethermal expansion coefficient of the substrate 111, such as the sapphiresubstrate, so the wafer may not be warped or damaged caused by thedifference in the thermal expansion coefficient between the supportmember 151 and the light emitting structure 120 formed under thesubstrate 111, thereby improving the reliability of the light emittingdevice.

The bottom surface area of the support member 151 is substantially equalto the top surface area of the support member 151. In addition, thebottom surface area of the support member 151 is substantially equal tothe top surface area of the first conductive semiconductor layer 115.Further, the width of the bottom surface of the support member 151 maybe equal to the width of the top surface of the substrate 111 and thewidth of the top surface of the first conductive semiconductor layer115. Thus, since the individual chips are divided after the supportmember 151 has been formed, the lateral sides of the support member 151,the substrate 111 and the first conductive semiconductor layer 115 canbe aligned on the same plane. In addition, the bottom surface area ofthe support member 151 may be larger or smaller than the area of the topsurface S1 of the substrate 111, but the embodiment is not limitedthereto.

Referring to FIG. 2, a length D1 of a first lateral side of the supportmember 151 is substantially the same as a length of a first lateral sideof the substrate 111 corresponding to the first lateral side of thesupport member 151, and a length D2 of a second lateral side of thesupport member 151 is substantially the same as a length of a secondlateral side of the substrate 111 corresponding to the second lateralside of the support member 151. Further, the lengths D1 and D2 of thefirst and second lateral sides of the support member 151 may be longeror shorter than the length of each lateral side of the substrate 111,but the embodiment is not limited thereto. In addition, a distance D5between the first and second connection electrodes 141 and 143 is aninterval between two adjacent electrode pads and corresponds to ½ ormore based on the length of one lateral side of the light emittingdevice, but the embodiment is not limited thereto.

The bottom surface of the support member 151 is a substantially flatsurface or an irregular surface, but the embodiment is not limitedthereto.

A thickness T1 of the support member 151 is at least thicker than athickness H2 of the second connection electrode 143. Alternatively, thethickness T1 of the support member 151 may be thinner than the thicknessH2 of the second connection electrode 143. If the thickness of theinsulating layer 133 is thicker than the thickness of the secondconnection electrode 143, the thickness of the support member 151 maybecome thin. A thickness T2 of a predetermined region of the supportmember 151 may be thicker than a thickness of the first connectionelectrode 141. The support member 151 may have the thickness in therange of 1 μm˜100,000 μm or 50 μm˜1,000 μm.

The bottom surface of the support member 151 is lower than the bottomsurfaces of the first and second electrodes 135 and 137 and is alignedon the same plane (that is, horizontal plane) with the bottom surfacesof the first and second connection electrodes 141 and 143.

The support member 151 makes contact with outer peripheral surfaces ofthe first and second electrodes 135 and 137 and first and secondconnection electrodes 141 and 143. Thus, heat induced from the first andsecond electrodes 135 and 137 and first and second connection electrodes141 and 143 can be diffused and dissipated through the support member151. The thermal conductivity of the support member 151 can be improvedby the thermal diffusion agent contained in the support member 151, sothat the support member 151 can dissipate the heat through the wholesurface of the support member 151. Thus, the reliability of the lightemitting device 100 can be improved against heat.

In addition, the lateral side of the support member 151 can be alignedon the same plane (that is, vertical plane) with the lateral sides ofthe light emitting structure 120 and the substrate 111. Further, onelateral side or at least one lateral side of the support member 151 mayprotrude more than the lateral sides of the light emitting structure 120and the substrate 111, but the embodiment is not limited thereto.

The light emitting device 100 is mounted through the flip scheme, so themost of light is emitted toward the top surface of the substrate 111 andsome light is emitted through the lateral sides of the substrate 111 andthe light emitting structure 120. Thus, the light loss caused by thefirst and second electrodes 135 and 137 can be reduced. Accordingly, thelight extraction efficiency can be improved by the first and secondpatterns portions of the substrate 111 disposed on the light emittingdevice 100 and heat dissipation efficiency can be improved by thesupport member 151.

A phosphor layer or a transmissive resin layer having no phosphor may bedisposed on the substrate 111, but the embodiment is not limitedthereto.

FIGS. 3 to 9 are sectional views showing the manufacturing process forthe light emitting device according to the first embodiment. Althoughthe following description is made based on the individual device tofacilitate the explanation, the light emitting device is manufactured inthe wafer level and the individual device is manufactured through theprocess described later. However, the manufacture of the individualdevice is not limited to the process described later, but the processsteps may be increased or reduced to manufacture the individual device.

Referring to FIG. 3, the substrate 111 is loaded in growth equipment,and the compound semiconductor including group II to VI elements isdisposed on the substrate 111 in the form of a layer or a pattern. Thesubstrate 111 serves as a growth substrate.

The substrate 111 may include a transmissive substrate, an insulatingsubstrate or a conductive substrate. For instance, the substrate 111 mayinclude one selected from the group consisting of Al₂O₃, GaN, SiC, ZnO,Si, GaP, InP, Ga₂O₃, and GaAs. The substrate 111 may be disposed on thetop surface thereof with a light extracting structure, such as aconcavo-convex pattern. The concavo-convex pattern varies the criticalangle of the light, thereby improving the light extraction efficiency.

The growth equipment includes an E-beam evaporator, PVD (physical vapordeposition) equipment, CVD (chemical vapor deposition) equipment, PLD(plasma laser deposition) equipment, a dual-type thermal evaporator,sputtering equipment, or MOCVD (metal organic chemical vapor deposition)equipment, but the embodiment is not limited thereto.

The first semiconductor layer 113 is disposed on the substrate 111. Thefirst semiconductor layer 113 can be formed by using the compoundsemiconductor including the group III-V elements. The firstsemiconductor layer 113 may serve as a buffer layer to reduce thelattice mismatch with respect to the substrate. The first semiconductorlayer 113 may be an undoped semiconductor layer including a GaN-basedsemiconductor, which is not intentionally doped.

The light emitting structure 120 is disposed on the first semiconductorlayer 113. The light emitting structure 120 includes the firstconductive semiconductor layer 115, the active layer 117 and the secondconductive semiconductor layer 119, which are sequentially formed.

The first conductive semiconductor layer 115 includes the group III-Vcompound semiconductor doped with the first conductive dopant. Indetail, the first conductive semiconductor layer 115 may include oneselected from the group consisting of GaN, AlGaN, InGaN, InN, InAlGaN,AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. If the first conductivesemiconductor layer 115 is an n type semiconductor layer, the firstconductive dopant includes the n type dopant such as Si, Ge, Sn, Se orTe. The first conductive semiconductor layer 115 can be prepared as asingle layer or multiple layers, but the embodiment is not limitedthereto. The first conductive semiconductor layer 115 may furtherinclude a superlattice structure including various materials, but theembodiment is not limited thereto.

The active layer 117 is disposed on the first conductive semiconductorlayer 115. The active layer 117 includes at least one of a singlequantum well structure, a multiple quantum well structure, a quantumwire structure and a quantum dot structure. The active layer 117 can beformed by using the semiconductor material of the group III-V elementssuch that the active layer 117 may have a periodicity of the well layerand the barrier layer having the compositional formula ofIn_(x)Al_(y)Ga_(1−x−y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). For instance, theactive layer 117 may have the periodicity of the InGaN well layer/GaNbarrier layer, the InGaN well layer/AlGaN barrier layer, or the InGaNwell layer/InGaN barrier layer, but the embodiment is not limitedthereto.

A conductive clad layer can be disposed on and/or under the active layer117. The conductive clad layer may include an AlGaN-based semiconductor.The barrier layer of the active layer 117 has a bandgap higher than thatof the well layer and the conductive clad layer has the bandgap higherthan that of the barrier layer.

The second conductive semiconductor layer 119 is disposed on the activelayer 117. The second conductive semiconductor layer 119 includes thegroup III-V compound semiconductor doped with second conductive dopant.For instance, the second conductive semiconductor layer 119 may includeone selected from the group consisting of GaN, AlGaN, InGaN, InN,InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. If secondconductive semiconductor layer 119 is a p type semiconductor layer, thesecond conductive dopant includes the p type dopant such as Mg or Zn.The second conductive semiconductor layer 119 can be prepared as asingle layer or multiple layers, but the embodiment is not limitedthereto. The second conductive semiconductor layer 119 may furtherinclude a superlattice structure including various materials, but theembodiment is not limited thereto.

The light emitting structure 120 may be defined by the first conductivesemiconductor layer 115, the active layer 117 and the second conductivesemiconductor layer 119. In addition, a third conductive semiconductorlayer having polarity opposite to that of the second conductivesemiconductor layer 119, that is, the n type semiconductor layer may bedisposed on the second conductive semiconductor layer 119. Thus, thelight emitting structure 120 may have one of an n-p junction structure,a p-n junction structure, an n-p-n junction structure, and a p-n-pjunction structure.

Referring to FIG. 4, the predetermined region A1 of the light emittingstructure 120 is etched. The predetermined region A1 of the lightemitting structure 120 exposes the first conductive semiconductor layer115 and the exposed portion of the first conductive semiconductor layer115 is lower than the top surface of the active layer 117.

During the etching process, the predetermined region A1 of the lightemitting structure 120 is dry-etched after masking the top surface ofthe light emitting structure 120 using the mask pattern. The dry etchingcan be performed by using at least one of ICP (Inductively CoupledPlasma) equipment, RIE (Reactive Ion Etching) equipment, CCP (CapacitiveCoupled Plasma) equipment, and ECR (Electron Cyclotron Resonance)equipment. The etching process may be performed through the wet etchingprocess and the embodiment is not limited thereto.

The predetermined region A1 of the light emitting structure 120 is anetching region and one or a plurality of predetermined regions A1 may beformed.

Referring to FIG. 5, the reflective electrode layer 131 is disposed onthe light emitting structure 120. The reflective electrode layer 131 hasan area smaller than a top surface area of the second conductivesemiconductor layer 119 to prevent the short when the reflectiveelectrode layer 131 is manufactured. The reflective layer 131 isdeposited by using sputter equipment and/or deposition equipment aftermasking the region, which is spaced apart from the upper edge by apredetermined distanced D3, and the predetermined region A1 of the lightemitting structure 120 using the mask.

The reflective electrode layer 131 may include a metallic materialhaving the reflectivity of at least 70% or 90%.

The reflective electrode layer 131 may include the structure of theohmic contact layer/reflective layer/diffusion barrier layer/protectivelayer, the reflective layer/diffusion barrier layer/protective layer,the ohmic contact layer/reflective layer/protective layer, or thereflective layer. The material and the thickness of each layer have beendescribed in the description of FIG. 1.

The second electrode 137 is disposed on the first reflective electrodelayer 131 after forming the first electrode 135 on the first conductivesemiconductor layer 115. The first and second electrodes 135 and 137 canbe formed by using sputter equipment and/or deposition equipment aftermasking the region except for the electrode region using the mask, butthe embodiment is not limited thereto. The first and second electrodes135 and 137 may include one selected from the group consisting of Cr,Ti, Co, Ni, V, Hf, Ag, Al, Ru, Rh, Pt, Pd, Ni, Mo, W, La, Ta, Ti and analloy thereof. The first and second electrodes 135 and 137 may beprepared as multiple layers. For instance, the first and secondelectrodes 135 and 137 may include at least two of the adhesivelayer/the reflective layer/the diffusion barrier layer/the bonding layerformed by using the above elements. The first and second electrodes 135and 137 can be formed to have the same stack structure through the samemanufacturing process, but the embodiment is not limited thereto.

The second electrode 137 may physically make contact with the reflectiveelectrode layer 131 and the second conductive semiconductor layer 119.

The insulating layer 133 is disposed on the reflective electrode layer131 through the sputtering or deposition process. The insulating layer133 is formed over the whole area of the reflective electrode layer 131except for the regions for the first and second electrodes 135 and 137,thereby covering the top surfaces of the reflective electrode layer 131and the second conductive semiconductor layer 119 and the exposedportion of the first conductive semiconductor layer 115.

The insulating layer 133 includes an insulating material or aninsulating resin formed by using oxide, nitride, fluoride or sulfideincluding Al, Cr, Si, Ti, Zn or Zr. For instance, the insulating layer133 may include one selected from the group consisting of SiO₂, Si₃N₄,Al₂O₃ and TiO₂. The insulating layer 133 may be prepared as a singlelayer or multiple layers, but the embodiment is not limited thereto. Theprocess for forming the electrodes 135 and 137 can be interchanged withthe process for forming the insulating layer 133.

Referring to FIG. 6, the first connection electrode 141 is bonded ontothe first electrode 135 and the second connection electrode 143 isbonded onto the second electrode 137. The first connection electrode 141includes a conductive pad, such as a solder ball and/or a metal bump andis bonded onto the first electrode 135. The first connection electrode141 can be aligned vertically to the top surface of the first conductivesemiconductor layer 115. The second connection electrode 143 includes aconductive pad, such as a solder ball and/or a metal bump and is bondedonto the second electrode 137. The second connection electrode 143 canbe aligned vertically to the top surface of the second conductivesemiconductor layer 119.

The height H1 of the first connection electrode 141 is longer than theheight H2 of the second connection electrode 143. The bottom surfaces ofthe first and second connection electrodes 141 and 143 are disposed ondifferent planes and the top surfaces of the first and second connectionelectrodes 141 and 143 are aligned on the same plane (that is, the samehorizontal plane).

Referring to FIG. 7, the support member 151 is disposed on theinsulating layer 133 through the squeeze scheme and/or the dispensingscheme. The support member 151 is prepared as an insulating supportlayer by adding the thermal diffusion agent into a resin, such assilicon or epoxy. The thermal diffusion agent may include at least oneof oxide, nitride, fluoride and sulfide including Al, Cr, Si, Ti, Zn orZr. For instance, the thermal diffusion agent may include a ceramicmaterial. The thermal diffusion agent may be defined as a powderparticle having a predetermined size, a grain, filler or an additive.The thermal diffusion agent includes the ceramic material. The ceramicmaterial includes the LTCC (low temperature co-fired ceramic) or theHTCC (high temperature co-fired ceramic). The ceramic material mayinclude metal nitride having thermal conductivity higher than that ofnitride or oxide. For instance, the metal nitride may include a materialhaving the thermal conductivity equal to or higher than 140 W/mK. Forexample, the ceramic material includes one selected from the groupconsisting of SiO₂, Si_(x)O_(y), Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y),Al₂O₃, BN, Si₃N₄, SiC(SiC—BeO), BeO, CeO, and AlN. The thermalconductive material may include C-component, such as diamond or CNT. Inaddition, the amount of the thermal diffusion agent added to the supportmember 151 may be 1˜99 wt %. In order to improve the thermal diffusionefficiency, at least 50 wt % of the thermal diffusion agent can be addedto the support member 151.

The support member 151 can be formed by mixing polymer with ink or pasteusing the ball mill, the planetary ball mill, the impellor mixing, thebead mill or the basket mill. In this case, a solvent and a dispersingagent can be used to uniformly distribute the mixture. The solvent isadded to adjust the viscosity. In the case of ink, 3 to 400 Cps of thesolvent is added. In addition, in the case of paste, 100 to one millionCps of the solvent is added. The solvent may include one selected fromthe group consisting of water, methanol, ethanol, isopropanol,butylcabitol, MEK, toluene, xylene, diethyleneglycol (DEG), formamide(FA), α-terpineol (TP), γ-butylrolactone (BL), Methylcellosolve (MCS),Propylmethylcellosolve (PM), and a combination thereof. In order toreinforce the coupling strength between particles, silane-basedadditives, such as 1-Trimethylsilylbut-1-yne-3-ol, Allytrimethylsilane,Trimethylsilyl methanesulfonate, Trimethylsilyl tricholoracetate, Methyltrimethylsilylacetate, or Trimethylsilyl propionic acid, can be added tothe solvent. In this case, gelation may occur, so the addition of thesilane-based additives must be seriously considered.

In the manufacturing process, the connection electrode, such as thesolder bump, is previously manufactured and bonded and the supportmember is provided around the connection electrode. In contrast, afterprinting or dispensing the insulating layer including the ink or thepaste, the insulating layer is cured, and then a conductive material isfilled in a hole corresponding to the connection electrode, therebyforming the connection electrode.

The support member 151 has the height corresponding to the top surfaceof the first and second connection electrodes 141 and 143.

The support member 151 is filled around the first and second connectionelectrodes 141 and 143 and the first and second electrodes 135 and 137.The top surfaces of the first and second connection electrodes 141 and143 are exposed through the top surface of the support member 151.

The support member 151 is an insulating support layer that supports theconnection electrodes 141 and 143. In detail, the connection electrodes141 and 143 are inserted into the support member 151.

The support member 151 has the thickness T sufficient for exposing thetop surfaces of the first and second connection electrodes 141 and 143.The support member 151 is cured at the predetermined temperature. Forinstance, the support member 151 is cured at the temperature of 200°C.±100° C., which may not exert influence upon the semiconductor layer.

The substrate 111 has the thickness of about 30 μm or above. Thesubstrate 111 may have the thickness in the range of 30 μm to 150 μm bypolishing the bottom surface of the substrate 111. Since the supportmember 151 is provided in the light emitting device 100 in opposition tothe substrate 111, the substrate 111 can be used as a light emittinglayer, so that the thickness of the substrate 111 may become thin. TheCMP (chemical mechanical polishing) can be performed with respect to thesurfaces of the support member 151 and the first and second connectionelectrodes 141 and 143. In addition, after the support member 151 hasbeen formed, electrode holes are formed in the support member 151 andthe first and second connection electrodes can be formed through theelectrode holes.

After rotating the light emitting device manufactured as shown in FIG. 7by an angle of 180°, the first pattern portion having a plurality ofprotrusions 11 are disposed on the top surface S1 of the substrate 111through the first etching scheme as shown in FIG. 8, that is, the firstpattern portion is disposed on the surface opposite to the bottomsurface of the substrate 111 where the semiconductor layer is formed.The first etching scheme includes at least one of a wet etching and adry etching. If the first pattern portion has been formed, the upperportion of the substrate 111 is processed through a second etchingscheme to form the second pattern portion having a plurality of concaves12. The second etching scheme includes at least one of a wet etching anda dry etching. The concaves 12 are formed in the protrusions 11 as wellas in a flat region of the top surface of the substrate 111. The concave12 may have a size equal to ½ (50%) or less based on a size of theprotrusion 11 and detailed description thereof is included in thedescription of FIG. 1. The concaves or the protrusions having theirregular interval can be formed through the wet etching process and theconcaves or the protrusions having the periodic or regular interval canbe formed through the dry etching process.

The light emitting device shown in FIG. 9 can be divided into individuallight emitting devices as shown in FIG. 1 through the scribing, breakingand/or cutting work. The light emitting device is packaged in the waferlevel, so that the light emitting device can be mounted on the modulesubstrate through the flip bonding scheme without using the wire. Thelight emitting device shown in FIG. 9 can be mounted on a modulesubstrate 170 as shown in FIG. 10 so that the light emitting device canbe used as a light emitting module.

The top surface area of the support member 151 may be equal to thebottom surface area of the substrate 111 and the height of the supportmember 151 may be higher than the top surfaces of the first and secondelectrodes 135 and 137.

FIG. 10 is a side sectional view showing a light emitting apparatushaving the light emitting device shown in FIG. 1.

Referring to FIG. 10, the light emitting device 100 is mounted on amodule substrate 170 through a flip scheme.

An insulating layer 172 is disposed on a metal layer 171 of the modulesubstrate 170 and first and second electrode pads 173 and 174 aredisposed on the insulating layer 172. The first and second electrodepads 173 and 174 are land patterns for supplying power. A protectivelayer 175 is disposed on the insulating layer 172 except for a regionfor the first and second electrode pads 173 and 174. The protectivelayer 175 is a solder resist layer and includes a white protective layeror a green protective layer as a reflective layer or an insulatinglayer. The protective layer 175 effectively reflects the light, so thatthe quantity of reflected light can be increased.

The module substrate 170 may include a printed circuit board (PCB)having a circuit pattern (not shown). The module substrate 170 may alsoinclude a resin PCB, a metal core PCB (MCPCB), or a flexible PCB (FPCB),but the embodiment is not limited thereto.

The first connection electrode 141 of the light emitting device 100 isaligned corresponding to the top surface of the first electrode pad 173,and the second connection electrode 143 of the light emitting device 100is aligned corresponding to the top surface of the second electrode pad174. The first electrode pad 173 is bonded with the first connectionelectrode 141 by a bonding material 177, and the second electrode pad174 is bonded with the second connection electrode 143 by the bondingmaterial 177.

The light emitting device 100 is operated as power is applied theretofrom the first and second electrode pads 173 and 174. The heat generatedfrom the light emitting device 100 is transferred through the first andsecond connection electrodes 141 and 143 and then dissipated to theoutside through the entire surface of the support member 151. The bottomsurface of the support member 151 is spaced apart from the top surfaceof the module substrate 170 by a predetermined distance corresponding tothe thickness of the bonding material 177.

A distance between the bottom surfaces of the first and secondconnection electrodes 141 and 143 of the light emitting device 100 andthe top surface of the module substrate 170 is equal to a distancebetween the bottom surface of the support member 151 and the top surfaceof the module substrate 170.

Although it has been described that one light emitting device 100 ismounted on the module substrate 170, a plurality of light emittingdevices can be arrayed on the module substrate 170, and the embodimentis not limited thereto.

FIG. 11 is a side sectional view showing a light emitting deviceaccording to the second embodiment.

Referring to FIG. 11, the light emitting device includes a phosphorlayer 161 disposed on a surface of the substrate in opposition to thesupport member 151, that is, disposed on the light exit surface. Thephosphor layer 161 may include a phosphor film or a coated layer and canbe prepared as a single layer or multiple layers.

The phosphor layer 161 includes a transmissive resin layer containingphosphor materials. The transmissive resin layer includes silicon orepoxy, and the phosphor material includes one selected from the groupconsisting of YAG, TAG, silicate, nitride, and oxy-nitride-basedmaterial. The phosphor material includes at least one of a red phosphormaterial, a yellow phosphor material and a green phosphor material andexcites a part of the light emitted from the active layer 117 to convertthe wavelength of the light.

The phosphor layer 161 is disposed on the top surface S1 of thesubstrate 111 and at least one lateral side S2 of the substrate 111 andthe light emitting structure 120. The phosphor layer 161 has thethickness in the range of 1˜100,000 μM or 1˜10,000 μm.

The phosphor layer 161 may include various phosphor layers differentfrom each other, in which a first layer is one of red, yellow and greenphosphor layers, and a second layer is disposed on the first layer anddifferent from the first layer. Two different phosphor layers can bedisposed on first and second regions, which are not overlapped with eachother, respectively. A protective layer including a transmissive resinmaterial can be disposed on the lateral sides of the phosphor layer 161and the light emitting structure, but the embodiment is not limitedthereto.

The first and second pattern portions are formed between the substrate111 and the phosphor layer 161, in which the first pattern portion hasthe first concavo-convex structure including a first concave 11Aconcaved down with a first depth from the top surface of the substrate111 and the second pattern portion has the second concavo-convexstructure including a second concave 11B having a size equal to or lessthan 50% based on a size of the first concave 11A. The first concave 11Amay be defined as a groove or a recess and the second concave 11Bincludes micro concavo-convex parts or a roughness convexly or concavelydisposed on the first concave 11A and the top surface S1. Thus, the topsurface S1 of the substrate 111 can be formed with the microconcavo-convex structure in addition to the concavo-convex structureincluding the plural first concaves 11A. The interval of the microconcavo-convex structure may be narrower than the interval of the firstconcaves 11A. The phosphor layer 161 may be disposed in the secondconcave 12.

The orientation angle of the light may be changed by the first andsecond concaves 11A and 12 so that the quantity of light extractedthrough the upper portion of the substrate 111 may be increased. Thus,the light extraction efficient at the upper portion of the substrate 111can be improved, so that the color mixture by the phosphor layer 161 canbe improved.

FIG. 12 is a side sectional view showing a light emitting deviceaccording to the third embodiment.

Referring to FIG. 12, a plurality of protrusions 11B are formed at anupper portion of the substrate 111. The protrusions 11B protrude inopposition to the support member 151 to change the critical angle of thelight incident through the substrate 111. Thus, the light extractionefficiency of the light emitting device can be improved. The protrusions11B may have hemispherical lens shapes or polygonal shapes and arearranged in the form of a stripe pattern. The second pattern portionhaving a plurality of concaves 12 may be disposed on the surface of theprotrusion 11B and the top surface of the substrate 111. The secondpattern portion may have the micro concavo-convex parts or theroughness, but the embodiment is not limited thereto. A phosphor layer162 may be disposed in the concave 12.

The phosphor layer 162 is disposed on the top surface of the substrate111. A bottom surface of the phosphor layer 162 has a concavo-convexshape extending along the protrusions 112 and a top surface of thephosphor layer 162 has a flat shape or a concavo-convex shape. Thebottom surface of the phosphor layer 162 may make contact with the topsurface of the substrate 111 or may be separated therefrom, and theembodiment is not limited thereto.

The phosphor layer 162 can be formed only on the top surface of thesubstrate 111 or can be additionally disposed on the lateral sides ofthe substrate 111 and the light emitting structure 120, but theembodiment is not limited thereto.

FIG. 13 is a view showing a light emitting device according to thefourth embodiment and FIG. 14 is a bottom view of FIG. 13.

Referring to FIGS. 13 and 14, a division slot 152B is formed betweensupport members 152 and 152A. The division slot 152B divides the supportmembers 152 and 152A from each other. The first support member 152 isdisposed under one side of the light emitting structure 120 around thefirst connection electrode 141. The second support member 152A isdisposed under the other side of the light emitting structure 120 aroundthe second connection electrode 143.

The division slot 152B physically and electrically separates the firstsupport member 152 from the second support member 152A and exposes theinsulating layer 133 formed under the division slot 152B.

The first and second support members 152 and 152A may include theinsulating material or the conductive material. The insulating materialincludes a resin material having the thermal diffusion agent. Theconductive material includes carbon, SiC or a metal. If the first andsecond support members 152 and 152A include the conductive material, thefirst and second electrodes 141 and 142 include materials different fromthe conductive material.

Since the first and second support members 152 and 152A including theconductive material are separated from each other by the division slot152B, the electric short can be prevented.

The division slot 152B has a width D6 corresponding to a distancebetween the first and second support members 152 and 152A, and a depthcorresponding to the height T1 of the second support member 152A. Thedivision slot 152B prevents the electric interference between the firstand second support members 152 and 152A.

The bottom surfaces of the first and second support members 152 and 152Aare aligned on the same plane with the bottom surfaces of the first andsecond connection electrodes 141 and 143. The first and second supportmembers 152 and 152A can be mounted through the first and secondconnection electrodes 141 and 143 even if the first and second supportmembers 152 and 152A include the conductive materials.

An insulating material including a ceramic material can be furtherdisposed between first and second support members 152 and 152A. In thiscase, the ceramic material is aligned on the same horizontal plane withthe bottom surfaces of the first and second support members 152 and152A.

The substrate 111 is disposed on the top surface S1 thereof with thefirst pattern portion including a plurality of protrusions 11 and thesecond pattern portion including a plurality of concaves 12 having asize smaller than a size of the protrusions 11. The phosphor layer 161disposed on the substrate 111 may make contact with or may be separatefrom the top surface S1 of the substrate 111, and the embodiment is notlimited thereto. The phosphor layer 161 may be disposed in the concaves12.

FIG. 15 is a view showing a light emitting device according to the fifthembodiment and FIG. 16 is a bottom view of FIG. 15.

Referring to FIGS. 15 and 16, the light emitting device includes aplurality of support members 153 and 153A aligned around the first andsecond connection electrodes 141 and 143. A peripheral portion of thefirst connection electrode 141 is covered with the first support member153 and a peripheral portion of the second connection electrode 143 iscovered with the second support member 153A. The first and secondsupport members 153 and 153A may include insulating materials orconductive materials.

A width W3 of the first support member 153 is wider than a width of thefirst connection electrode 141, so that the first support member 153 mayserve as a thermal and electrical conductive path. A width W4 of thesecond support member 153A is wider than a width of the secondconnection electrode 143, so that the second support member 153A mayserve as a thermal and electrical conductive path.

A distance D7 between the first and second support members 153 and 153Ais at least ½ of a length of one lateral side of the light emittingstructure 120.

An insulating material including a ceramic material can be furtherdisposed between first and second support members 153 and 153A. In thiscase, the ceramic material is aligned on the same horizontal plane withthe bottom surfaces of the first and second support members 153 and153A. An insulating material may be filled between the first and secondsupport members 153 and 153A, but the embodiment is not limited thereto.

As shown in FIG. 15, a transmissive resin layer 160 may be furtherformed between the substrate 111 and the phosphor layer 161. Thetransmissive resin layer 160 may include a resin material having therefractive index lower than that of the substrate 111, such as siliconor epoxy.

The substrate 111 is disposed on the top surface S1 thereof with thefirst pattern portion including the protrusions 11 and the secondpattern portion including the concaves 12 having a size smaller than asize of the protrusions 11. The transmissive resin layer 160 may beformed among the protrusions 11. The thickness of the transmissive resinlayer 160 corresponds to the distance between the top surface S1 of thesubstrate 111 and the bottom surface of the phosphor layer 161 and isequal to, higher than, or lower than the thickness (or height) of theprotrusion 11. In addition, the transmissive resin layer 160 bonds thephosphor layer 161 to the upper portion of the substrate 111 so that theinterfacial loss of the light travelling to the transmissive resin layer160 through the substrate 111 can be minimized. The phosphor layer 161may be disposed on the concaves 12 formed in the protrusions 11 and thetransmissive resin layer 160 is formed in the concaves 12.

FIG. 17 is a side sectional view showing a light emitting deviceaccording to the sixth embodiment.

Referring to FIG. 17, a width W5 of a first connection electrode 141Amay be wider than a width of the first electrode 135 and lateral sidesof the first connection electrode 141A and the first electrode 135 maybe aligned on the same plane with the lateral sides of the lightemitting structure 120 and the substrate 111. The predetermined regionA1 of the light emitting structure 120 may be etched such that the etchregion of the first conductive semiconductor layer 115 can be exposed.An edge region of the light emitting structure 120 is spaced apart fromthe lateral side of the light emitting structure 120 by a predetermineddistance D8 along the edge region of the first conductive semiconductorlayer 115 and can be formed in a loop shape. A part 135A of the firstelectrode 135 is formed in a loop shape along the edge region of thefirst conductive semiconductor layer 115. The loop shape may include anopen loop shape or a closed loop shape.

A width W6 of a second connection electrode 143A may be wider than awidth of the second electrode 137.

The light extracting structure, such as roughness, can be disposed on asurface 161A of the phosphor layer 161.

The transmissive resin layer 160 is disposed between the phosphor layer161 and the substrate 111. The transmissive resin layer 160 can makecontact with the protrusions 11 and the top surface S1 of the substrate111 and may be disposed in the concaves 12.

FIG. 18 is a side sectional view showing a light emitting deviceaccording to the seventh embodiment.

Referring to FIG. 18, a phosphor layer 163 is disposed on the topsurface of the substrate 111, and a lens 164 is disposed on the phosphorlayer 163. The substrate 111 is disposed on the top surface S1 thereofwith the first pattern portion including a plurality of protrusions 11and the second pattern portion including a plurality of concaves 12having a size smaller than a size of the protrusions 11. The phosphorlayer 163 is disposed on the top surface of the substrate 111 with apredetermined thickness. The phosphor layer 163 may be disposed in theconcaves 12 of the second pattern portion, but the embodiment is notlimited thereto.

The lens 164 may be disposed on the phosphor layer 163 as a convex lens.In addition, the lens 164 may have a concave lens shape or an asphericlens shape having a concavo-convex pattern. Further, the lens 164 mayhave a shape in which the center of a top surface and/or a bottomsurface of the lens 164 is concaved as a total reflection surface.

A plurality of second electrodes 137 are formed under the reflectiveelectrode layer 131, and second connection electrodes 143 are alignedunder the second electrodes 137. The second connection electrodes 143are spaced apart from each other at a predetermined interval T3. Whenviewed from the bottom of the light emitting device, the secondconnection electrodes 143 are aligned in the form of a dot matrix. Thesupport members 151 are disposed between first and second connectionelectrodes 141 and 143 and between the second connection electrodes 143to serve as an insulating support layer. Since the second connectionelectrodes 143 are disposed under the light emitting structure, thestrength of the support member 151 can be reinforced and the electriccontact efficiency can be improved. In addition, the bonding defect canbe prevented from occurring at the second connection electrode 143 ofthe light emitting device. A plurality of first connection electrodes141 can be provided and the embodiment is not limited thereto.

FIG. 19 is a side sectional view showing a light emitting deviceaccording to the eighth embodiment.

Referring to FIG. 19, predetermined regions A1 of the light emittingstructure 120 are etching regions to expose the first conductivesemiconductor layer 115 at various regions. The first electrodes 135 aredisposed under the first conductive semiconductor layer 115 and thesecond electrodes 137 are disposed under the reflective electrode layer131. Since the first and second electrodes 135 and 137 are alternatelyaligned, the current can be uniformly supplied. A phosphor layer 165 isdisposed on the substrate 111. Since the light emitting structure 120 isprepared as a plurality of cells, the brightness can be improved. Thesubstrate 111 is disposed on the top surface S1 thereof with the firstpattern portion including a plurality of protrusions 11 and the secondpattern portion including a plurality of concaves 12 having a sizesmaller than a size of the protrusions 11. The transmissive resin layer160 is disposed between the substrate 111 and the phosphor layer 165.The transmissive resin layer 160 makes contact with the protrusions 11and the concaves 12 and may bond the phosphor layer 165.

FIG. 20 is a side sectional view showing a light emitting deviceaccording to the ninth embodiment. In the following description of theninth embodiment, the same reference numerals will be assigned to theelements and structures that have been described in the first embodimentand detailed description thereof will be omitted in order to avoidredundancy.

Referring to FIG. 20, the reflective electrode layer 130 and the secondelectrode pad 132 are disposed under the light emitting structure 120and the reflective electrode layer 130 serves as an ohmic and reflectiveelectrode under the second conductive semiconductor layer 119. Thesecond electrode pad 132 has a layered shape or a pattern shape. Thesubstrate 111 is disposed on the light emitting structure 120. Thesubstrate 111 is disposed on the top surface S1 thereof with the firstpattern portion including a plurality of protrusions 11 and the secondpattern portion including a plurality of concaves 12 having a sizesmaller than a size of the protrusions 11. The structure of the firstpattern portion and the structure of the second pattern portion formedin the first pattern portion may vary, and the embodiment is not limitedthereto.

A first electrode pad 134 is disposed under the first conductivesemiconductor layer 115. The first electrode pad 134 makes contact withthe first conductive semiconductor layer 115 and is bonded between afirst electrode bonding layer 136 and the first conductive semiconductorlayer 115. The first electrode bonding layer 136 is bonded between thefirst electrode pad 134 and the first connection electrode 141 toelectrically connect the first electrode pad 134 with the firstconnection electrode 141. The first electrode bonding layer 136 includesa first bonding electrode 136A and a second bonding electrode 136B underthe first bonding electrode 136A. The first bonding electrode 136A isbonded to the first electrode pad 134 and the second bonding electrode136B is bonded between the first connection electrode 141 and the firstbonding electrode 136A.

The first electrode pad 134 has the structure with a material and athickness the same as those of the stack structure of the secondelectrode pad 132, which will be described later. For instance, thefirst and second electrode pads 134 and 132 include an adhesive layer, areflective layer under the adhesive layer, a diffusion barrier layerunder the reflective layer, and a bonding layer under the diffusionbarrier layer. The first electrode bonding layer 136 is bonded betweenthe first connection electrode 141 and the first electrode pad 134 toimprove the bonding property between the first connection electrode 141and the first electrode pad 134.

The first bonding electrode 136A of the first electrode bonding layer136 is bonded with the second bonding electrode 136B bonded to the firstconnection electrode 141, so that the physical bonding and electricalconnection property of the first connection electrode 141 can beimproved.

The reflective electrode layer 130 is formed under the second conductivesemiconductor layer 119 and the second electrode pad 132 is formed underthe reflective electrode layer 130. A bottom surface area of thereflective electrode layer 130 may be equal to or smaller than a topsurface area of the second electrode pad 132, but the embodiment is notlimited thereto. A second electrode bonding layer 138 is formed betweenthe second electrode pad 132 and the second connection electrode 143 toimprove the bonding strength between the second electrode pad 132 andthe second connection electrode 143.

The second electrode bonding layer 138 connects the second electrode pad132 with the second connection electrode 143. The second electrodebonding layer 138 includes a third bonding electrode 138A and a fourthbonding electrode 138B under the third bonding electrode 138A. The thirdbonding electrode 138A is bonded to the second electrode pad 132 and thefourth bonding electrode 138B is bonded between the second connectionelectrode 143 and the third bonding electrode 138A.

The second electrode bonding layer 138 is bonded between the secondconnection electrode 143 and the second electrode pad 132 to improve thebonding property between the second connection electrode 143 and thesecond electrode pad 132. The first electrode pad 134 serves as a firstelectrode and the second electrode pad 132 serves as a second electrode.

FIG. 21 is a view showing an example of the reflective electrode layerand the second electrode pad according to the embodiment.

Referring to FIG. 21, the reflective electrode layer 130 includes anohmic contact layer 1, a reflective layer 2 under the ohmic contactlayer 1, a diffusion barrier layer 3 under the reflective layer 2, and aprotective layer 4 under the diffusion barrier layer 3.

The ohmic contact layer 1 may include one selected from the groupconsisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO(indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indiumgallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zincoxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SnO, InO,InZnO, ZnO, IrOx, RuOx, NiO, Ni, Cr and an alloy including at least twoof the above elements. The ohmic contact layer 11 may include at leastone layer and has a thickness of about 1 to 1,000 Å.

The reflective layer 2 formed under the ohmic contact layer 1 mayinclude a material having reflectivity of about 70% or above. Forinstance, the reflective layer 12 may include one selected from thegroup consisting of Al, Ag, Ru, Pd, Rh, Pt, Ir and an alloy having atleast two of the above elements. A metal of the reflective layer 12makes ohmic-contact with the bottom surface of the second conductivesemiconductor layer. In this case, the ohmic contact layer 1 can beomitted. The reflective layer 2 may have a thickness of about 1 to10,000 Å.

The diffusion barrier layer 3 may include one selected from the groupconsisting of Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti andan alloy having at least two of the above elements. The diffusionbarrier layer 3 prevents the interlayer diffusion at the boundary regionbetween two different layers. The diffusion barrier layer 3 may have athickness of about 1 to 10,000 Å.

The protective layer 4 may include one selected from the groupconsisting of Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti andan alloy having at least two of the above elements. The protective layer14 may have a thickness of about 1 to 10,000 Å. The reflective electrodelayer 130 may not include at least one of the ohmic contact layer 1, thediffusion barrier layer 3 and the protective layer 4.

The second electrode pad 132 includes an adhesive layer 5, a reflectivelayer 6 under the adhesive layer 5, a diffusion barrier layer 7 underthe reflective layer 6 and a bonding layer 8 under the diffusion barrierlayer 7. The adhesive layer 5 is bonded to the reflective electrodelayer 130 and include one selected from the group consisting of Cr, Ti,Co, Ni, V, Hf and an alloy thereof. The adhesive layer 5 has a thicknessof about 1 to 1,000 Å. The reflective layer 6 is formed under theadhesive layer 5 and includes one selected from the group consisting ofAg, Al, Ru, Rh, Pt, Pd and an alloy thereof. The reflective layer 6 hasa thickness of about 1 to 10,000 Å. The diffusion barrier layer 7 isformed under the reflective layer 6 and includes one selected from thegroup consisting of Ni, Mo, W, Ru, Pt, Pd, La, Ta, Ti and an alloythereof. The diffusion barrier layer 7 has a thickness of about 1 to10,000 Å. The bonding layer 8 includes one selected from the groupconsisting of Al, Au, Cu, Hf, Pd, Ru, Rh, Pt and an alloy thereof. Thebonding layer 8 has a thickness of about 1 to 10,000 Å. The secondelectrode pad 132 may not include the reflective layer 6.

At least one of the reflective electrode layer 130 and the secondelectrode pad 132 can be applied to the reflective electrode layer andthe second electrode pad shown in FIG. 1 or disclosed in otherembodiments, and the embodiment is not limited thereto.

FIG. 22 is a view showing an example of the second electrode bondinglayer of FIG. 20.

Referring to FIG. 22, the second electrode bonding layer 138 includes athird bonding electrode 138A and a fourth bonding electrode 138B, inwhich the third bonding electrode 138A includes at least three metallayers. The third bonding electrode 138A includes an adhesive layer 21,a support layer 22 under the adhesive layer 21, and a protective layer23 under the support layer 22. The adhesive layer 21 is bonded to thesecond electrode pad and includes one selected from the group consistingof Cr, Ti, Co, Cu, Ni, V, Hf and an alloy including at least two of theabove elements. The adhesive layer 21 has a thickness of 1˜1,000 Å. Thesupport layer 22 is thicker than the adhesive layer 21 and includes oneselected from the group consisting of Ag, Al, Au, Co, Cu, Hf, Mo, Ni,Ru, Rh, Pt, Pd and an alloy including at least two of the aboveelements. The support layer 22 has a thickness of 1˜500,000 Å or1,000˜100,000 Å. The protective layer 23 protects the first conductivesemiconductor layer from external influence and includes one selectedfrom the group consisting of Au, Cu, Ni, Hf, Mo, V, W, Rh, Ru, Pt, Pd,La, Ta, Ti and an alloy including at least two of the above elements.The protective layer 23 has a thickness of 1˜50,000 Å

The adhesive layer 21 and the support layer 22 of the third bondingelectrode 138A may be repeatedly stacked by at least one periodicity.

The fourth bonding electrode 138B includes at least three metal layers.In detail, the fourth bonding electrode 138B includes an adhesive layer24, a diffusion barrier layer 25 under the adhesive layer 24, and abonding layer 26 under the diffusion barrier layer 25. The adhesivelayer 24 is bonded to the third bonding electrode 138A and includes oneselected from the group consisting of Cr, Ti, Co, Ni, V, Hf and an alloyincluding at least two of the above elements. The adhesive layer 24 hasa thickness of 1˜1,000 Å. The diffusion barrier layer 25 prevents theinterlayer diffusion and includes one selected from the group consistingof Ni, Mo, Hf, W, Ru, Pt, Pd, La, Ta, Ti and an alloy including at leasttwo of the above elements. The diffusion barrier layer 25 has athickness of 1˜10,000 Å. The bonding layer 26 is bonded to the firstconnection electrode and includes one selected from the group consistingof Au, Cu, Ni, Hf, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti and an alloyincluding at least two of the above elements. The bonding layer 26 has athickness of 1˜10,000 Å. The adhesive layer 24 and the diffusion barrierlayer 25 of the fourth bonding electrode 138B may be repeatedly stackedby at least one periodicity. The structure of the second electrodebonding layer shown in FIG. 22 can be applied to the electrode shown inFIG. 1 or disclosed in other embodiments, and the embodiment is notlimited thereto.

FIG. 23 is a view showing an example of the first electrode bondinglayer of FIG. 20.

Referring to FIG. 23, the first electrode bonding layer 136 includes afirst bonding electrode 136A and a second bonding electrode 136B, inwhich the first bonding electrode 136A includes a metal layer the sameas that of the third bonding layer 138A shown in FIG. 25. For instance,the first bonding electrode 136A may have a stack structure including anadhesive layer 31, a support layer 32 under the adhesive layer 31 and aprotective layer 33 under the support layer 32. The second bondingelectrode 136B includes a metal layer the same as that of the secondbonding layer 138B. For instance, the second bonding electrode 136B mayhave a stack structure including an adhesive layer 34, a diffusionbarrier layer 35 under the adhesive layer 34 and a bonding layer 36under the diffusion barrier layer 35. Thus, the first bonding electrode136A is disposed between the first electrode pad and the second bondingelectrode 136B, and the second bonding electrode 136B is disposedbetween the first bonding electrode 136A and the first connectionelectrode 141. The structure of the first and second bonding electrodes136A and 136B refers to the stack structure of the third and fourthbonding electrodes shown in FIG. 22. The structure of the firstelectrode bonding layer shown in FIG. 23 can be applied to the electrodeshown in FIG. 1 or disclosed in other embodiments, and the embodiment isnot limited thereto.

FIG. 24 is a view showing another example of the second electrodebonding layer of FIG. 20.

Referring to FIGS. 20 and 24, a top surface area of the third bondingelectrode 138A of the second electrode bonding layer 138 may be equal toa bottom surface area of the second electrode pad 132. The top surfacearea of the third bonding electrode 138A of the second electrode bondinglayer 138 may be larger than the top surface area of the fourth bondingelectrode 138B and equal to or smaller than the bottom surface area ofthe second electrode. The structure of the second electrode pad and thesecond electrode bonding layer shown in FIG. 24 can be applied to theelectrode shown in FIG. 1 or disclosed in other embodiments, and theembodiment is not limited thereto.

FIG. 25 is a view showing a light emitting device package having thelight emitting device of FIG. 1.

Referring to FIG. 25, the light emitting device package 200 includes abody 211, first and second lead electrodes 215 and 217 installed in thebody 211, a molding member 219 and the light emitting device 100.

The body 211 is injection molded by using one of a high reflective resin(for instance, PPA), a polymeric material or a plastic material and canbe prepared as a substrate having a single layer or a multiple layers.The body 211 includes a cavity 212 having an open top surface, in whicha sidewall of the cavity 212 is inclined or vertical to a bottom surfaceof the cavity 212.

The first and second lead electrodes 215 and 217 are disposed in thecavity 212 such that the first and second lead electrodes 215 and 217are spaced apart from each other.

The light emitting device 100 is bonded onto the first and second leadelectrodes 215 and 217 through the flip scheme. In detail, the firstconnection electrode 141 of the light emitting device 100 is bonded tothe first lead electrode 215 and the second connection electrode 143 ofthe light emitting device 100 is bonded to the second lead electrode217.

The distance between the top surface of the first lead electrode 215 andthe bottom surface of the light emitting device 100, that is, the bottomsurfaces of the first connection electrode 141, the second connectionelectrode 143 and the support member 151 may be equal to the distancebetween the top surface of the second lead electrode 217 and the bottomsurface of the light emitting device 100.

The support member 151 of the light emitting device 100 is disposed onthe first lead electrode 215 and the second lead electrode 217 todissipate the heat through the entire surface of the support member 151.

The molding member 219 is formed in the cavity 212. The molding member219 includes a transmissive resin material, such as silicon or epoxy.The molding member 219 may further include a phosphor material.

The most of the light generated from the light emitting device 100 isextracted through the top surface and the lateral sides of the lightemitting device 100 and the extracted light is dissipated to the outsidethrough the molding member 219. Since the first and second patternportions are disposed on the top surface of the light emitting device100 as shown in FIG. 1, the light extraction efficiency of the lightpassing through the top surface of the substrate can be more improved.

One or a plurality of light emitting devices can be mounted in the lightemitting device package 200, but the embodiment is not limited thereto.If the light emitting device having the phosphor layer according toanother embodiment is mounted in the light emitting device package, thephosphor material may not be added to the molding member 219. Inaddition, various phosphor materials different from each other orphosphor materials emitting similar colors can be added to the moldingmember 219.

FIG. 26 is a side sectional view of a light emitting device according tothe tenth embodiment.

Referring to FIG. 26, the light emitting device 101 includes a firstconductive semiconductor layer 115, an active layer 117, a secondconductive semiconductor layer 119, a reflective electrode layer 131, aninsulating layer 133, a first electrode 135, a second electrode 137, afirst connection electrode 141, a second connection electrode 143 and asupport member 151.

The top surface of the light emitting device 101 is the top surface S3of the first conductive semiconductor layer 115 and the bottom surfaceof the light emitting device 101 is the bottom surface of the supportmember 151. The top surface S3 of the first conductive semiconductorlayer 115 is opposite to the bottom surface of the support member 151.The light emitting device 101 can be obtained by removing the substratefrom the structure shown in FIG. 1 so that the thickness of the lightemitting device 101 can be thin. The thickness of the support member 151can be increased to support the light emitting device 101.

The first conductive semiconductor layer 115 is disposed on the topsurface S3 thereof with a third pattern portion having a thirdconcavo-convex structure including a plurality of protrusions 13 and afourth pattern portion having a fourth concavo-convex structure disposedon the third concavo-convex structure and including a plurality ofconcaves 14. The fourth concavo-convex structure is disposed on thethird concavo-convex structure and defined by a micro concavo-convexconfiguration having a size smaller than a size of the protrusions 13.

The protrusions 13 of the third pattern portion may protrude from thetop surface S3 of the first conductive semiconductor layer 115 or mayhave an embossing shape. In addition, the third pattern portion mayinclude the concaves concaved or engraved lower than the top surface S3of the first conductive semiconductor layer 115. The concaves 14 of thefourth pattern portion may be disposed on the surface of the protrusions13 and the top surface S3 of the first conductive semiconductor layer115 substrate 111 with a size smaller than a size of the protrusions 13.The concaves 14 may have an intaglio shape or a recess shape. Inaddition, the fourth pattern portion may have an embossing shape or aconvex shape and may be formed with micro protrusions having a sizesmaller than that of the protrusions 13.

The third pattern portion includes the third concavo-convex structureincluding the protrusions 13 having the embossing shape and the flat topsurface, and the fourth pattern portion includes the fourthconcavo-convex structure disposed on the third concavo-convex structureand having the intaglio shape.

When viewed from the top, the third pattern portion may be arranged inthe form of a matrix or a lattice.

For the purpose of convenience of explanation, according to theembodiment, the third pattern portion will be described as protrusions13 and the fourth pattern portion will be described as concaves 14, butthe embodiment is not limited thereto. The first conductivesemiconductor layer 115 may be disposed at the uppermost layer of thelight emitting device 101. However, it is also possible to dispose thefirst semiconductor layer at the uppermost layer of the light emittingdevice 101 and the embodiment is not limited thereto.

The active layer 117 is disposed on the bottom surface of the firstconductive semiconductor layer 115. A plurality of protrusions 13protrude upward from the top surface S3 of the first conductivesemiconductor layer 115, which is opposite to the bottom surface of thefirst conductive semiconductor layer 115, and the concaves 14 are formedin the protrusions 13. The protrusions 13 may have a side sectionalshape of a hemisphere, a cone, a polygonal cone, a column such as acylinder or a polygonal column, or a truncated cone. When viewed fromthe top, each protrusion 13 may have a circular shape, a polygonalshape, or a mixed shape of a sphere and a surface.

The concaves 14 are concaved down with respect to the surface of eachprotrusion 13. The concaves 14 may have a side sectional shape of ahemisphere, a cone, a polygonal cone, a column such as a cylinder or apolygonal column, or a truncated cone. When viewed from the top, eachconcave 14 may have a circular shape, a polygonal shape, or a mixedshape of a sphere and a surface. The concaves 14 may be concaved downfrom the top surface S3 of the first conductive semiconductor layer 115.A maximum width of the concave 14 may be smaller than a maximum width ofthe protrusion 13.

A size of the concave 14 may be equal to or smaller than 50% based on asize of the protrusion 13. For instance, the concave 14 may have thesize in the range of ½ to 1/100 based on the size of the protrusion 13.The size of the protrusion 13 may be at least one of a maximum width, alength of one lateral side, a radius, a thickness and a height L4 of theprotrusion 13 and the size of the concave 14 may be at least one of amaximum width, a length of each lateral side, a height, a depth, aradius and a thickness of the concave 14.

The width or the height L4 of the protrusion 13 may be in the range of0.1 μm to 10 μm, for instance, may be smaller than the thickness of thefirst conductive semiconductor layer 115 in the range of 0.1 μm to 3 μm.The width of the protrusion 13 may be larger than the height or thethickness of the protrusion 13, but the embodiment is not limitedthereto. The width of the concave 14, that is, the maximum width of theconcave 12 is smaller than the width of the protrusion 13 in the rangeof 0.1 nm to 100 nm or 0.1 nm to 100 μm in an irregular case. A pitch L1between two protrusions 13 may be in the range of 0.1 μm to 100 μm, anda pitch between two concaves 14 may be in the range of 0.1 μm to 100 μm.

The protrusions 13 may change the critical angle of incident light andthe concaves 14 may change the critical angle of light incident onto theprotrusions 13 and the top surface S3 of the first conductivesemiconductor layer 115. If the first and second patterns are disposedon the first conductive semiconductor layer 115 with different sizesfrom each other, the total reflection rate of the incident light may belowered so that the light extraction efficiency can be improved.

The protrusions 13 may be arranged in a regular interval L3 or a randominterval. In addition, the concaves 12 may be arranged in a regularinterval or a random interval. The interval of the micro concavo-convexparts of the fourth pattern portion may be narrower than the interval L3of the protrusions 13. Due to the third and fourth pattern portionsaccording to the embodiment, the substrate disposed on the lightemitting structure 120 can be removed, so that the travelling path ofthe light may be shortened. Thus, the loss of light caused by the totalreflection of the light in the light emitting device can be reduced.

A light emitting structure 120 can be defined by the first conductivesemiconductor layer 115, the second conductive semiconductor layer 119,and the active layer 117. The light emitting structure 120 includes thegroup III-V compound semiconductor. For instance, the light emittingstructure 120 includes the semiconductor having the compositionalformula of In_(x)Al_(y)Ga_(1−x−y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and can emitthe light having a predetermined peak wavelength in the wavelength rangeof an ultraviolet ray band to a visible ray band.

The light emitting structure 120 of the light emitting device 101 may bedefined by the first conductive semiconductor layer 115, the activelayer 117 and the second conductive semiconductor layer 119. The lightemitting structure 120 may have one of an n-p junction structure, a p-njunction structure, an n-p-n junction structure, and a p-n-p junctionstructure. In this case, the symbols “n” and “p” represent n and p typesemiconductor layers, respectively, and the symbol “-” represents thattwo layers are directly or indirectly stacked on each other.Hereinafter, the second conductive semiconductor layer 119 will bereferred to as the uppermost layer of the light emitting structure 120for the purpose of convenience of explanation.

The light emitting device 101 can be obtained by removing the substratefrom the light emitting device shown in FIG. 1. The top surface of thefirst conductive semiconductor layer 115 is disposed at the top side ofthe light emitting device 101.

The reflective electrode layer 131 is formed under the second conductivesemiconductor layer 119. The reflective electrode layer 131 includes atleast one of an ohmic contact layer, a reflective layer, a diffusionbarrier layer and a protective layer. The reflective electrode layer 131may include the structure of the ohmic contact layer/reflectivelayer/diffusion barrier layer/protective layer, the reflectivelayer/diffusion barrier layer/protective layer, the ohmic contactlayer/reflective layer/protective layer, the reflective layer/diffusionbarrier, or the reflective layer. The structure of the reflectiveelectrode layer 131 is shown in FIG. 21.

The reflective electrode layer 131 may include the stack structure of atransmissive electrode layer/a reflective layer. The reflectiveelectrode layer 131 may include one selected from the group consistingof ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinctin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zincoxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO(antimony tin oxide), GZO (gallium zinc oxide), SnO, InO, InZnO, ZnO,IrOx, and RuOx. The reflective layer may be formed under thetransmissive electrode layer. The reflective layer includes a firstlayer having a first refractive index and a second layer having a secondrefractive index. The reflective layer may include the stack structurein which at least two pairs of the first and second layers arealternately stacked. The first refractive index is different from thesecond refractive index and the first and second layers may include amaterial having the refractive index in the range of 1.5 to 2.4. Forinstance, the first and second layers may include a conductive materialor an insulating material. Such a structure may be defined as a DBR(distributed bragg reflection) structure.

A light extracting structure, such as a roughness, can be disposed on asurface of at least one of the second conductive semiconductor layer 119and the reflective electrode layer 131. The light extracting structuremay vary the critical angle of the incident layer to improve the lightextraction efficiency.

The first and second connection electrodes 141 and 143 may serve as alead for supplying power and a heat dissipation path. The first andsecond connection electrodes 141 and 143 may have a column shape. Forinstance, the first and second connection electrodes 141 and 143 mayhave a spherical shape, a cylindrical shape, a polygonal column shape ora random shape. The polygonal column shape may be an equiangular columnshape or not, and the embodiment is not limited thereto. The top andbottom surfaces of the first and second connection electrodes 141 and143 may have a circular shape or a polygonal shape, but the embodimentis not limited thereto. The bottom surface area of the first and secondconnection electrodes 141 and 143 may be different from the top surfacearea of the first and second connection electrodes 141 and 143. Forinstance, the bottom surface area of the first and second connectionelectrodes 141 and 143 may be larger or smaller than the top surfacearea of the first and second connection electrodes 141 and 143.

At least one of the first and second connection electrodes 141 and 143is smaller than a width of a bottom surface of the light emittingstructure 120 and larger than a diameter or a width of a bottom surfaceof the first and second electrodes 135 and 137.

The diameter or the width of the first and second connection electrodes141 and 143 is in the range of 1 μm˜100,000 μm and the height of firstand second connection electrodes 141 and 143 is in the range of 1μm˜100,000 μm. The height H1 of the first connection electrode 141 maybe longer than the height H2 of the second connection electrode 143 andbottom surfaces of the first and second connection electrodes 141 and143 may be aligned on the same plane (that is, horizontal plane).

The first and second connection electrodes 141 and 143 may be preparedas a single layer by using one metal or an alloy. The width and theheight of the single layer is in the range of 1 μm˜100,000 μm. Forinstance, the single layer has the thickness larger than the thicknessof the second connection electrode 143.

The first and second connection electrodes 141 and 143 may include oneselected from the group consisting of Ag, Al, Au, Cr, Co, Cu, Fe, Hf,In, Mo, Ni, Si, Sn, Ta, Ti, W and an alloy thereof. In order to improvethe adhesive strength with respect to the first and second electrodes135 and 137, the first and second connection electrodes 141 and 143 maybe plated with a metal including one selected from the group consistingof In, Sn, Ni, Cu and an alloy thereof. At this time, the platingthickness may be in the range of 1˜100,000 Å.

A plating layer can be further disposed on the surfaces of the first andsecond connection electrodes 141 and 143. The plating layer may includeTin or an alloy thereof, Ni or an alloy thereof, or Tin-Ag—Cu. At thistime, the plating layer may have a thickness of about 0.5 μm˜10 μm. Theplating layer can improve the bonding strength with respect to otherbonding layers.

The insulating layer 133 may be formed under the reflective electrodelayer 131. In detail, the insulating layer 133 can be disposed on thebottom surface of the second conductive semiconductor layer 119, lateralsides of the second conductive semiconductor layer 119 and the activelayer 117, and the bottom surface of the predetermined region A1 of thefirst conductive semiconductor layer 115. The insulating layer 133 isdisposed on the lower region of the light emitting structure 120 exceptfor the region for the reflective electrode layer 131, the firstelectrode 135 and the second electrode 137 to electrically protect thelower portion of the light emitting structure 120.

The insulating layer 133 includes an insulating material or aninsulating resin formed by using oxide, nitride, fluoride or sulfideincluding at least one of Al, Cr, Si, Ti, Zn and Zr. For instance, theinsulating layer 133 may include one selected from the group consistingof SiO₂, Si₃N₄, Al₂O₃ and TiO₂. The insulating layer 133 may be preparedas a single layer or multiple layers, but the embodiment is not limitedthereto. The insulating layer 133 prevents the layer-to-layer short ofthe light emitting structure 120 when a metal structure is formed underthe light emitting structure for the purpose of flip bonding.

The insulating layer 133 can be formed only on the surface of the lightemitting structure 120 without being disposed on the bottom surface ofthe reflective electrode layer 131. Since the support member 151 havingthe insulating property is disposed on the bottom surface of thereflective electrode layer 131, the insulating layer 133 may not need toextend to the bottom surface of the reflective electrode layer 131.

The insulating layer 133 has the DBR structure in which the first andsecond layers having refractive indexes different from each other arealternately aligned. In detail, the first layer includes one of SiO₂,Si₃N₄, Al₂O₃, and TiO₂ and the second layer includes materials exceptfor the materials of the first layer.

The insulating layer 133 may have the thickness in the range of 100 to10,000 Å. If the insulating layer 133 is prepared as the multiplelayers, each layer may have the thickness in the range of 1 to 50,000 Åor 100 to 10,000 Å. The thickness of each layer of the insulating layer133 having the multiple layers may vary the reflective efficiencyaccording to the emission wavelength. In this case, the reflectiveelectrode layer may be omitted.

The first and second connection electrodes 141 and 143 may include Ag,Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and an alloythereof. In addition, the first and second connection electrodes 141 and143 may have a plating layer including In, Sn, Ni, Cu and an alloythereof to improve the adhesive strength with respect to the first andsecond electrodes 135 and 137. In this case, the plating layer has thethickness in the range of 1˜100,000 Å. The first and second connectionelectrodes 141 and 143 may be used as a single metal, such as a solderball or a metal bump, but the embodiment is not limited thereto.

The support member 151 serves as a support layer to support the lightemitting device 100. The support member 151 includes an insulatingmaterial. For instance, the insulating material may be a resin includingsilicon or epoxy. In addition, the insulating material may include pasteor insulating ink. The insulating material may also include a resinselected from the group consisting of a polyacrylate resin, an epoxyresin, a phenolic resin, a polyamides resin, a polyimide resin, anunsaturated polyesters resin, a polyphenylene ether resin (PPE), apolyphenylene oxide resin (PPO), a polyphenylene sulfides resin, acyanate ester resin, benzocyclobutene (BCB), Polyamido-amine Dendrimers(PAMAM), Polypropylene-imine, Dendrimers (PPI), PAMAM-OS (organosilicon)having an internal structure of PAMAM and an outer surface oforganosilicon, and a combination thereof. The material for the supportmember 151 may be different from the material for the insulating layer133.

At least one of compounds, such as oxide, nitride, fluoride or sulfideincluding at least one of Al, Cr, Si, Ti, Zn and Zr, can be added to thesupport member 151. The compound added to the support member 151 may bea thermal diffusion agent. The thermal diffusion agent is a powderparticle having a predetermined size, a grain, filler or an additive. Inthe following description, the support member 151 including the thermaldiffusion agent will be described for the purpose of convenience of theexplanation. The thermal diffusion agent may include an insulatingmaterial or a conductive material having a size of 1 Å˜100,000 Å. Inorder to improve the thermal diffusion efficiency, the thermal diffusionagent may have a size of 1,000 Å˜50,000 Å. The grain of the thermaldiffusion agent may have a spherical shape or an irregular shape, butthe embodiment is not limited thereto.

The thermal diffusion agent includes a ceramic material. The ceramicmaterial includes at least one of LTCC (low temperature co-firedceramic), HTCC (high temperature co-fired ceramic), alumina, quartz,calcium zirconate, forsterite, SiC, graphite, fused-silica, mullite,cordierite, zirconia, beryllia, and aluminum nitride. The ceramicmaterial may include metal nitride having thermal conductivity higherthan that of nitride or oxide. For instance, the metal nitride mayinclude a material having the thermal conductivity equal to or higherthan 140 W/mK. For example, the ceramic material includes one selectedfrom the group consisting of SiO₂, Si_(x)O_(y), Si₃N₄, Si_(x)N_(y),SiO_(x)N_(y), Al₂O₃, BN, Si₃N₄, SiC(SiC—BeO), BeO, CeO, and AlN. Thethermal conductive material may include C-component, such as diamond orCNT.

The support member 151 can be prepared as a single layer or multiplelayers, and the embodiment is not limited thereto. The support member151 is provided therein with ceramic powder, so the strength and thethermal conductivity of the support member 151 can be improved.

In addition, the amount of the thermal diffusion agent added to thesupport member 151 may be 1˜99 wt %. In order to improve the thermaldiffusion efficiency, 50˜99 wt % of the thermal diffusion agent can beadded to the support member 151. Since the thermal diffusion agent isadded to the support member 151, the thermal conductivity can be moreimproved at the interior of the support member 151. In addition, thesupport member 151 has the thermal expansion coefficient of 4-11[x10⁶/°C.]. The above thermal expansion coefficient is equal or similar to thethermal expansion coefficient of the sapphire substrate, so the wafermay not be warped or damaged caused by the difference in the thermalexpansion coefficient between the support member 151 and the lightemitting structure 120 disposed on the sapphire substrate, which is thegrowth substrate, thereby improving the reliability of the lightemitting device.

The bottom surface area of the support member 151 is substantially equalto the top surface area of the light emitting structure 120, that is,the top surface area of the support member 151. In addition, the bottomsurface area of the support member 151 is equal to the top surface areaof the first conductive semiconductor layer 115. Referring to FIG. 27, alength D1 of a first lateral side of the support member 151 issubstantially the same as a length of a first lateral side of the lightemitting structure 120 shown in FIG. 26, and a length D2 of a secondlateral side of the support member 151 is substantially the same as alength of a second lateral side of the light emitting structure 120shown in FIG. 26. In addition, a distance D5 between the first andsecond connection electrodes 141 and 143 is an interval between twoadjacent electrode pads and corresponds to ½ or more with respect to thelength of one lateral side of the light emitting device 101.

The bottom surface of the support member 151 is a substantially flatsurface or an irregular surface, but the embodiment is not limitedthereto.

A thickness T1 of the first region of the support member 151 is thickerthan a thickness of the second connection electrode 143. Alternatively,the thickness T1 of the first region of the support member 151 may bethinner than the thickness H2 of the second connection electrode 143. Ifthe thickness of the insulating layer 133 is thicker than the thicknessof the second connection electrode 143, the thickness of the supportmember 151 may become thin. A thickness T2 of the second region of thesupport member 151 is thicker than a thickness T2 of the firstconnection electrode 141. The support member 151 may have the thicknessT1 in the range of 1 μm˜100,000 μm or 50 μm˜1,000 μm.

The bottom surface of the support member 151 is lower than the bottomsurfaces of the first and second electrodes 135 and 137 and is alignedon the same plane (that is, horizontal plane) with the bottom surfacesof the first and second connection electrodes 141 and 143

The support member 151 makes contact with outer peripheral surfaces ofthe first and second electrodes 135 and 137 and first and secondconnection electrodes 141 and 143. Thus, heat induced from the first andsecond electrodes 135 and 137 and first and second connection electrodes141 and 143 can be diffused and dissipated through the support member151. The thermal conductivity of the support member 151 can be improvedby the thermal diffusion agent contained in the support member 151, sothat the support member 151 can dissipate the heat through the wholesurface of the support member 151. Thus, the reliability of the lightemitting device 100 can be improved against heat.

In addition, the lateral side of the support member 151 can be alignedon the same plane (that is, vertical plane) with the lateral sides ofthe light emitting structure 120 and the substrate 111.

The light emitting device 101 is mounted through the flip scheme, so themost of light is emitted toward the top surface of the light emittingstructure 120 and some light is emitted through the lateral sides of thelight emitting structure 120. Thus, the light loss caused by the firstand second electrodes 135 and 137 can be reduced. Accordingly, the lightextraction efficiency and heat dissipation efficiency of the lightemitting device 101 can be improved.

FIGS. 27 to 29 are views showing the manufacturing process for the lightemitting device.

Referring to FIG. 27, if the wafer as shown in FIG. 9 is rotated by anangle of 180°, the substrate 111 is located at the uppermost position ofthe light emitting device as shown in FIG. 27. In this state, thesubstrate 111 is subject to the lift off process. The lift off processis adopted to remove the substrate in the physical scheme and/or thechemical scheme. According to the physical scheme, laser is irradiatedonto the substrate 111 to remove the substrate 111. In addition,according to the chemical scheme, a hole is formed in the substrate 111and the semiconductor layer between the substrate 111 and the firstconductive semiconductor layer 115 is removed through the wet etching,thereby separating the substrate 111 from the light emitting structure120.

Referring to FIGS. 27 and 28, if the substrate 111 is removed, the firstsemiconductor layer 113 is exposed as shown in FIG. 11 so that the firstsemiconductor layer 113 can be removed through the wet etching process.Alternatively, the first semiconductor layer 114 may not be removed.Then, the upper portion of the first conductive semiconductor layer 115is etched through a first etching scheme to form the third patternportion having the third concavo-convex structure including a pluralityof protrusions 13. The first etching scheme includes at least one of awet etching and a dry etching. A part of the third pattern portion isbulged or concaved from the flat top surface of the first conductivesemiconductor layer 115.

Referring to FIG. 29, the upper portion of the first conductivesemiconductor layer 115 is etched through a second etching scheme toform the fourth pattern portion including a plurality of concaves 14.The second etching scheme includes at least one of a wet etching and adry etching. A part of the fourth pattern portion is bulged or concavedfrom the flat top surface S3 of the first conductive semiconductor layer115 as a recess or a roughness.

The light emitting device 101 is packaged in the wafer level and dividedinto individual chips through the scribing, breaking and/or cuttingwork, so that the light emitting device as shown in FIG. 29 can beprovided. Since the light emitting device is packaged in the waferlevel, the light emitting device can be mounted on the module substratethrough the flip bonding scheme without using the wire. In addition,since the light exit surface is aligned toward the top surface andlateral sides of the light emitting structure 120, other than theelectrode, the light loss can be reduced and the brightness and lightdistribution can be improved.

The bottom surface area of the support member 151 may be equal to orsmaller than the top surface area of the light emitting structure 120and the height of the support member 151 may be higher than thickness ofthe first and second electrodes 135 and 137 to the extent that thesupport member 151 can be aligned on the same horizontal plane with thebottom surfaces of the connection electrodes 141 and 143.

FIG. 30 is a view showing a light emitting apparatus having the lightemitting device shown in FIG. 26.

Referring to FIG. 30, the light emitting device 101 is mounted on amodule substrate 170 through a flip scheme.

An insulating layer 172 is disposed on a metal layer 171 of the modulesubstrate 170 and first and second pads 173 and 174 are disposed on theinsulating layer 172. The first and second pads 173 and 174 are landpatterns for supplying power. A protective layer 175 is disposed on theinsulating layer 172 except for a region for the first and second pads173 and 174. The protective layer 175 is a solder resist layer or aninsulating layer and includes a white protective layer or a greenprotective layer. The protective layer 175 effectively reflects thelight, so that the quantity of reflected light can be increased.

The module substrate 170 may include a printed circuit board (PCB)having a circuit pattern (not shown). The module substrate 170 may alsoinclude a resin PCB, a metal core PCB (MCPCB), or a flexible PCB (FPCB),but the embodiment is not limited thereto.

The first connection electrode 141 of the light emitting device 101 isaligned corresponding to the top surface of the first pad 173, and thesecond connection electrode 143 of the light emitting device 101 isaligned corresponding to the top surface of the second pad 174. Thefirst pad 173 is bonded with the first connection electrode 141 by abonding material 177, and the second pad 174 is bonded with the secondconnection electrode 143 by the bonding material 177.

A distance between the bottom surfaces of the first and secondconnection electrodes 141 and 143 of the light emitting device 101 andthe top surface of the module substrate 170 is equal to a distancebetween the bottom surface of the support member 151 and the top surfaceof the module substrate 170.

Although it has been described that one light emitting device 101 ismounted on the module substrate 170, a plurality of light emittingdevices can be arrayed on the module substrate 170, and the embodimentis not limited thereto. In addition, the light emitting device 101 isprovided on the upper portion thereof with the third and fourth patternportions, so that the light extraction efficiency can be improved.

FIG. 31 is a side sectional view showing a light emitting deviceaccording to the eleventh embodiment.

Referring to FIG. 31, the light emitting device includes a phosphorlayer 161 disposed on a top surface of the light emitting structure 120in opposition to the support member 151. The phosphor layer 161 mayinclude a phosphor film or a coated layer and can be prepared as asingle layer or multiple layers.

The transmissive resin layer 160 is formed between the first conductivesemiconductor layer 115 and the phosphor layer 161 and the transmissiveresin layer 160 may have the thickness equal to or thicker than thethickness of the protrusion 13 of the third pattern portion. Thetransmissive resin layer 160 may include a resin material, such assilicon or epoxy, but the embodiment is not limited thereto. Thetransmissive resin layer 160 is bonded to the phosphor layer 161. Thetransmissive resin layer 160 is disposed in the concave 14.

The phosphor layer 161 includes a transmissive resin layer containingphosphor materials. The transmissive resin layer includes silicon orepoxy, and the phosphor material includes one selected from the groupconsisting of YAG, TAG, silicate, nitride, and oxy-nitride-basedmaterial. The phosphor material includes at least one of a red phosphormaterial, a yellow phosphor material and a green phosphor material andexcites a part of the light emitted from the active layer 117 in such amanner that the light has various wavelengths.

The phosphor layer 161 is disposed on a top surface S1 of the substrate111 and lateral sides S2 of the substrate 111 and the light emittingstructure 120. The phosphor layer 161 has the thickness in the range of1˜100,000 μm or 1˜10,000 μm.

The phosphor layer 161 may include various phosphor layers differentfrom each other, in which a first layer is one of red, yellow and greenphosphor layers, and a second layer is disposed on the first layer anddifferent from the first layer. Two different phosphor layers can bedisposed on first and second regions, which are not overlapped with eachother, respectively. A protective layer including a transmissive resinmaterial can be disposed on the lateral sides of the phosphor layer 161and the light emitting structure, but the embodiment is not limitedthereto.

FIG. 32 is a side sectional view showing a light emitting deviceaccording to the twelfth embodiment.

Referring to FIG. 32, a plurality of protrusions 115A are formed at anupper portion of the first conductive semiconductor layer 115. Theprotrusions 115A protrude in opposition to the support member 151 tochange the critical angle of the light incident through the firstconductive semiconductor layer 115. Thus, the light extractionefficiency of the light emitting device can be improved. The protrusions115A have lens shapes or polygonal shapes and are arranged in the formof a stripe pattern or a matrix. Each protrusion 115A may have athree-dimensional structure, such as a polygonal horn structure.

The first conductive semiconductor layer 115 is disposed on the topsurface S3 thereof with the third pattern portion including a pluralityof first concaves 13A concaved from the top surface S3 of the firstconductive semiconductor layer 115 and the fourth pattern portionincluding second concaves 14 having the size equal to or less than 50%based on the size of the first concaves 13A is disposed on the topsurface S3 planarized with the first concaves 13A. Thus, the microconcavo-convex structure can be disposed on the top surface S3 of thefirst conductive semiconductor layer 115 in addition to theconcavo-convex structure including the first concaves 13A. The intervalof the micro concavo-convex structure may be narrower than the intervalof the first concaves 13A. The size and the shape of the first concaves13A and the second concaves 14 are shown in FIG. 26.

A phosphor layer 162 is disposed at an upper portion of the firstconductive semiconductor layer 115. A bottom surface of the phosphorlayer 162 has a concavo-convex shape extending along the protrusions 13Aand a top surface of the phosphor layer 162 has a second concavo-convexstructure, which is the micro concavo-convex structure defined by thefourth pattern portion. The phosphor layer 162 may be disposed in thesecond concaves 14.

The phosphor layer 162 can be disposed on the top surface or a part ofthe top surface of the first conductive semiconductor layer 115. Inaddition, the phosphor layer 162 can be disposed on the lateral sides ofthe light emitting structure 120, but the embodiment is not limitedthereto.

FIG. 33 is a view showing a light emitting device according to thethirteenth embodiment and FIG. 34 is a bottom view of FIG. 33.

Referring to FIGS. 33 and 34, a division slot 152B is formed betweensupport members 152 and 152A. The division slot 152B divides the supportmembers 152 and 152A from each other. The first support member 152 isdisposed under one side of the light emitting structure 120 around thefirst connection electrode 141. The second support member 152A isdisposed under the other side of the light emitting structure 120 aroundthe second connection electrode 143.

The division slot 152B physically and electrically separates the firstsupport member 152 from the second support member 152A and exposes theinsulating layer 133 formed under the division slot 152B. An insulatingmaterial may be filled in the division slot 152B and the bottom surfaceof the insulating material is aligned on the same plane with the bottomsurfaces of the first and second support members 152 and 152A.

The first and second support members 152 and 152A may include theinsulating material or the conductive material. The insulating materialincludes a resin material having the thermal diffusion agent. Theconductive material includes carbon, SiC or a metal. If the first andsecond support members 152 and 152A include the conductive material, thefirst and second electrodes 141 and 142 include materials different fromthe conductive material. Since the first and second support members 152and 152A including the conductive material are separated from each otherby the division slot 152B, the electric short can be prevented.

The division slot 152B has a width D6 corresponding to a distancebetween the first and second support members 152 and 152A, and a depthcorresponding to the height T1 of the second support member 152A. Thedivision slot 152B prevents the electric interference between the firstand second support members 152 and 152A.

The bottom surfaces of the first and second support members 152 and 152Aare aligned on the same plane (that is, horizontal plane) with thebottom surfaces of the first and second connection electrodes 141 and143. The first and second support members 152 and 152A can be mountedthrough the first and second connection electrodes 141 and 143 even ifthe first and second support members 152 and 152A include the conductivematerials.

An insulating material including a ceramic material can be furtherdisposed between first and second support members 152 and 152A. In thiscase, the ceramic material is aligned on the same horizontal plane withthe bottom surfaces of the first and second support members 152 and152A.

The transmissive resin layer 160 may be disposed on the first conductivesemiconductor layer 115 as well as in the concaves 14.

FIG. 35 is a side sectional view showing a light emitting deviceaccording to the fourteenth embodiment and FIG. 36 is a bottom view ofFIG. 35.

Referring to FIGS. 35 and 36, the light emitting device includes aplurality of support members 153 and 153A aligned around the first andsecond connection electrodes 141 and 143. A peripheral portion of thefirst connection electrode 141 is covered with the first support member153 and a peripheral portion of the second connection electrode 143 iscovered with the second support member 153A. The first and secondsupport members 153 and 153A may include insulating materials orconductive materials.

A width W3 of the first support member 153 is wider than a width of thefirst connection electrode 141, so that the first support member 153 mayserve as a thermal and electrical conductive path together with thefirst connection electrode 141. A width W4 of the second support member153A is wider than a width of the second connection electrode 143, sothat the second support member 153A may serve as a thermal andelectrical conductive path together with the second connection electrode143.

A distance D7 between the first and second support members 153 and 153Ais at least ½ of a length of one lateral side of the light emittingstructure 120.

An insulating material including a ceramic material can be furtherdisposed between first and second support members 153 and 153A. In thiscase, the ceramic material is aligned on the same plane (horizontalplane) with the bottom surfaces of the first and second support members153 and 153A.

The transmissive resin layer 160 may be disposed on the first conductivesemiconductor layer 115 as well as in the concaves 14.

FIG. 37 is a side sectional view showing a light emitting deviceaccording to the fifteenth embodiment.

Referring to FIG. 37, a width W5 of a first connection electrode 141Amay be wider than a width of the first electrode 135 and lateral sidesof the first connection electrode 141A and the first electrode 135 maybe aligned on the same plane (vertical plane) with the lateral sides ofthe light emitting structure 120. The predetermined region A1 of thelight emitting structure 120 may be etched such that the etch region ofthe first conductive semiconductor layer 115 can be exposed. An edgeregion of the light emitting structure 120 is spaced apart from thelateral side of the light emitting structure 120 by a predetermineddistance D8 along the edge region of the first conductive semiconductorlayer 115 and can be formed in a loop shape. A part 135A of the firstelectrode 135 is formed in a loop shape along the edge region of thefirst conductive semiconductor layer 115. The loop shape may include anopen loop shape or a closed loop shape.

A width W6 of a second connection electrode 143A may be wider than awidth of the second electrode 137.

The light extracting structure, such as roughness, can be disposed on asurface 161A of the phosphor layer 161.

The protrusions 13 of the third pattern portion and the concaves 14 ofthe fourth pattern portion are formed at an upper portion of the firstconductive semiconductor layer 15 with different sizes from each other.The transmissive resin layer 160 is formed between the first conductivesemiconductor layer 115 and the phosphor layer 161. The transmissiveresin layer 160 is disposed on the first conductive semiconductor layer115 as well as in the concaves 14.

FIG. 38 is a side sectional view showing a light emitting deviceaccording to the sixteenth embodiment.

Referring to FIG. 38, the light emitting device includes the firstconductive semiconductor layer 115, the phosphor layer 163 and the lens164. The phosphor layer 163 is disposed on the top surface of the firstconductive semiconductor layer 115, and the lens 164 is disposed on thephosphor layer 163. The top surface of the first conductivesemiconductor layer 115 may be formed with the first and second patternportions, but the embodiment is not limited thereto. According to theembodiment, a first semiconductor layer, for instance, a buffer layer ora low conductive semiconductor layer may be further formed between thephosphor layer 163 and the first conductive semiconductor layer 115. Inaddition, the protrusions 13 of the third pattern portion may bedisposed on the first conductive semiconductor layer 115 and the firstsemiconductor layer. Further, the concaves 14 of the fourth patternsportion may be disposed on the top surfaces of the protrusions 13 andthe first semiconductor layer. The phosphor layer 163 may be disposed inthe concaves 14.

The phosphor layer 163 has a predetermined thickness and the lens 164disposed on the phosphor layer 163 has a convex lens shape. The lens 164may also have a concave lens shape or an aspheric lens shape having aconcavo-convex pattern, and the embodiment is not limited thereto. Thelens 164 may be formed at the center of the top surface thereof with arecess concaved down with respect to peripheral regions.

A plurality of second electrodes 137 are formed under the reflectiveelectrode layer 131, and second connection electrodes 143 are alignedunder the second electrodes 137. The second connection electrodes 143are spaced apart from each other at a predetermined interval T3. Whenviewed from the bottom of the light emitting device, the secondconnection electrodes 143 are aligned in the form of a dot matrix. Thesupport members 151 are disposed between first and second connectionelectrodes 141 and 143 and between the second connection electrodes 143to serve as an insulating support layer. Since the second connectionelectrodes 143 are disposed under the light emitting structure, thestrength of the support member 151 can be reinforced and the electriccontact efficiency can be improved. In addition, the bonding defect canbe prevented from occurring at the second connection electrode 143 ofthe light emitting device. A plurality of first connection electrodes141 can be provided and the embodiment is not limited thereto.

FIG. 39 is a side sectional view showing a light emitting deviceaccording to the seventeenth embodiment.

Referring to FIG. 39, predetermined regions A1 of the light emittingstructure 120 are etching regions to expose the first conductivesemiconductor layer 115 at various regions. The first electrodes 135 aredisposed under the first conductive semiconductor layer 115 and thesecond electrodes 137 are disposed under the reflective electrode layer131. Since the first and second electrodes 135 and 137 are alternatelyaligned, the current can be uniformly supplied. The light emittingstructure 120 is defined by a plurality of cells, so that the brightnesscan be improved. The first conductive semiconductor layer 115 is formedat the upper portion thereof with the third pattern portion including aplurality of protrusions 13 and the fourth pattern portion including aplurality of concaves 14 having a size equal to or less than 50% basedon a size of the protrusions 13 of the third pattern portion. Due to thethird pattern portion and the fourth pattern portion having the microconcavo-convex structure, the critical angle of the incident light canbe changed. Thus, the quantity of light extracted through the upperportion of the light emitting structure 120 can be increased. Thetransmissive resin layer 160 may be disposed between the light emittingstructure 120 and the phosphor layer 165, but the embodiment is notlimited thereto. The transmissive resin layer 160 may be disposed on thefirst conductive semiconductor layer 115 as well as in the concaves 14.

FIG. 40 is a side sectional view showing a light emitting deviceaccording to the eighteenth embodiment. In the following description ofthe ninth embodiment, the same reference numerals will be assigned tothe elements and structures that have been described in the firstembodiment and detailed description thereof will be omitted in order toavoid redundancy.

Referring to FIG. 40, the reflective electrode layer 130 and the secondelectrode pad 132 are disposed under the light emitting structure 120and the reflective electrode layer 130 serves as an ohmic and reflectiveelectrode under the second conductive semiconductor layer 119. Thesecond electrode pad 132 has a layered shape or pattern shape.

A first electrode pad 134 is disposed under the first conductivesemiconductor layer 115. The first electrode pad 134 makes contact withthe first conductive semiconductor layer 115 and is bonded between afirst electrode bonding layer 136 and the first conductive semiconductorlayer 115. The first electrode bonding layer 136 is bonded between thefirst electrode pad 134 and the first connection electrode 141 toelectrically connect the first electrode pad 134 with the firstconnection electrode 141. The first electrode bonding layer 136 includesa first bonding electrode 136A and a second bonding electrode 136B underthe first bonding electrode 136A. The first bonding electrode 136A isbonded to the first electrode pad 134 and the second bonding electrode136B is bonded between the first connection electrode 141 and the firstbonding electrode 136A.

The first electrode pad 134 has the structure with a material and athickness the same as those of the stack structure of the secondelectrode pad 132, which will be described later. For instance, thefirst and second electrode pads 134 and 132 include an adhesive layer, areflective layer under the adhesive layer, a diffusion barrier layerunder the reflective layer, and a bonding layer under the diffusionbarrier layer. The first electrode bonding layer 136 is bonded betweenthe first connection electrode 141 and the first electrode pad 134 toimprove the bonding property between the first connection electrode 141and the first electrode pad 134.

The first bonding electrode 136A of the first electrode bonding layer136 is bonded with the second bonding electrode 136B bonded to the firstconnection electrode 141, so that the physical bonding and electricalconnection property of the first connection electrode 141 can beimproved.

The reflective electrode layer 130 is formed under the second conductivesemiconductor layer 119 and the second electrode pad 132 is formed underthe reflective electrode layer 130. A bottom surface area of thereflective electrode layer 130 may be equal to or smaller than a topsurface area of the second electrode pad 132, but the embodiment is notlimited thereto. A second electrode bonding layer 138 is formed betweenthe second electrode pad 132 and the second connection electrode 143 toimprove the bonding strength between the second electrode pad 132 andthe second connection electrode 143.

The second electrode bonding layer 138 connects the second electrode pad132 with the second connection electrode 143. The second electrodebonding layer 138 includes a third bonding electrode 138A and a fourthbonding electrode 138B under the third bonding electrode 138A. The thirdbonding electrode 138A is bonded to the second electrode pad 132 and thefourth bonding electrode 138B is bonded between the second connectionelectrode 143 and the third bonding electrode 138A.

The second electrode bonding layer 138 is bonded between the secondconnection electrode 143 and the second electrode pad 132 to improve thebonding property between the second connection electrode 143 and thesecond electrode pad 132. The first electrode pad 134 serves as a firstelectrode and the second electrode pad 132 serves as a second electrode.

FIG. 41 is a sectional view showing a light emitting device packagehaving the light emitting device of FIG. 26.

Referring to FIG. 41, the light emitting device package 201 includes abody 211, first and second lead electrodes 215 and 217 installed in thebody 211, a molding member 219 and the light emitting device 101.

The body 211 is injection molded by using one of a high reflective resin(for instance, PPA), a polymeric material or a plastic material and canbe prepared as a substrate having a single layer or a multiple layers.The body 211 includes a cavity 212 having an open top surface, in whicha sidewall 212A of the cavity 212 is inclined or vertical to a bottomsurface of the cavity 212.

The first and second lead electrodes 215 and 217 are disposed in thecavity 212 such that the first and second lead electrodes 215 and 217are spaced apart from each other.

The light emitting device 100 according to the previous embodiment(s) isbonded onto the first and second lead electrodes 215 and 217 through theflip scheme. In detail, the first connection electrode 141 of the lightemitting device 101 is bonded to the first lead electrode 215 and thesecond connection electrode 143 of the light emitting device 101 isbonded to the second lead electrode 217.

The distance between the top surface of the first lead electrode 215 andthe bottom surface of the light emitting device 100, that is, the bottomsurfaces of the first connection electrode 141, the second connectionelectrode 143 and the support member 151 may be equal to the distancebetween the top surface of the second lead electrode 217 and the bottomsurface of the light emitting device 100, but the embodiment is notlimited thereto.

The support member 151 of the light emitting device 101 is disposed onthe first lead electrode 215 and the second lead electrode 217 todissipate the heat through the entire surface of the support member 151.

The molding member 219 is formed in the cavity 212. The molding member219 includes a transmissive resin material, such as silicon or epoxy.The molding member 219 may further include a phosphor material.

The most of the light generated from the light emitting device 100 isextracted through the top surface and the lateral sides of the lightemitting device 100 and the extracted light is dissipated to the outsidethrough the molding member 219. The quantity of the light extractedthrough the top surface of the light emitting device 100 may beincreased due to the third and fourth pattern portions shown in FIG. 26,so the light loss in the light emitting device 101 can be reduced.

One or a plurality of light emitting devices can be mounted in the lightemitting device package 201, but the embodiment is not limited thereto.If the light emitting device having the phosphor layer as shown in FIG.31 is mounted in the light emitting device package, the phosphormaterial may not be added to the molding member 219. In addition,various phosphor materials different from each other or phosphormaterials emitting similar colors can be added to the molding member219.

<Lighting System>

The light emitting device according to the embodiment is applicable to alighting system. The lighting system includes a structure in which aplurality of light emitting devices are arrayed. The lighting systemincludes a display apparatus shown in FIGS. 42 and 43, a light unitshown in FIG. 44, a lighting lamp, a signal lamp, a headlamp for avehicle, and an electronic display.

FIG. 42 is an exploded perspective view showing a display apparatushaving the light emitting device according to the embodiment.

Referring to FIG. 42, a display apparatus 1000 according to theembodiment includes a light guide plate 1041, a light emitting module1031 to supply light to the light guide plate 1041, a reflective member1022 under the light guide plate 1041, an optical sheet 1051 on thelight guide plate 1041, a display panel 1061 on the optical sheet 1051,and a bottom cover 1011 to receive the light guide plate 1041, the lightemitting module 1031, and the reflective member 1022, but the embodimentis not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate1041, the optical sheet 1051, and the light unit 1050 may be defined asa light unit 1050.

The light guide plate 1041 diffuses the light supplied from the lightemitting module 1031 to provide surface light. The light guide plate1041 may include a transparent material. For example, the light guideplate 1041 may include one of acryl-based resin, such as PMMA (polymethyl methacrylate, PET (polyethylene terephthalate), PC(polycarbonate), COC (cyclic olefin copolymer) and PEN (polyethylenenaphtha late) resin.

The light emitting module 1031 is disposed on at least one side of thelight guide plate 1041 to supply the light to at least one side of thelight guide plate 1041. The light emitting module 1031 serves as thelight source of the display device.

At least one light emitting module 1031 is disposed to directly orindirectly supply the light from one side of the light guide plate 1041.The light emitting module 1031 may include a board 1033 and the lightemitting device according to the embodiments or the light emittingdevice 100. The light emitting device or the light emitting device 100are arranged on the board 1033 while being spaced apart from each otherat the predetermined interval.

The board 1033 may include a printed circuit board (PCB) including acircuit pattern (not shown). In addition, the board 1033 may alsoinclude a metal core PCB (MCPCB) or a flexible PCB (FPCB) as well as atypical PCB, but the embodiment is not limited thereto. If the lightemitting device 100 is installed on the side of the bottom cover 1011 oron a heat dissipation plate, the board 1033 may be omitted. The heatdissipation plate partially makes contact with the top surface of thebottom cover 1011.

In addition, the light emitting device 100 are arranged such that lightexit surfaces to discharge light of the light emitting device 100 arespaced apart from the light guide plate 1041 by a predetermined distanceon the board 1033, but the embodiment is not limited thereto. The lightemitting device 100 may directly or indirectly supply the light to alight incident surface, which is one side of the light guide plate 1041,but the embodiment is not limited thereto.

The reflective member 1022 is disposed below the light guide plate 1041.The reflective member 1022 reflects the light, which is traveleddownward through the bottom surface of the light guide plate 1041,toward the display panel 1061, thereby improving the brightness of thelight unit 1050. For example, the reflective member 1022 may includePET, PC or PVC resin, but the embodiment is not limited thereto. Thereflective member 1022 may serve as the top surface of the bottom cover1011, but the embodiment is not limited thereto.

The bottom cover 1011 may receive the light guide plate 1041, the lightemitting module 1031, and the reflective member 1022 therein. To thisend, the bottom cover 1011 has a receiving section 1012 having a boxshape with an opened top surface, but the embodiment is not limitedthereto. The bottom cover 1011 can be coupled with the top cover (notshown), but the embodiment is not limited thereto.

The bottom cover 1011 can be manufactured through a press process or anextrusion process by using metallic material or resin material. Inaddition, the bottom cover 1011 may include metal or non-metallicmaterial having superior thermal conductivity, but the embodiment is notlimited thereto.

The display panel 1061, for example, is an LCD panel including first andsecond transparent substrates, which are opposite to each other, and aliquid crystal layer interposed between the first and second substrates.A polarizing plate can be attached to at least one surface of thedisplay panel 1061, but the embodiment is not limited thereto. Thedisplay panel 1061 displays information by allowing the light to passtherethrough. The display device 1000 can be applied to various portableterminals, monitors of notebook computers, monitors or laptop computers,and televisions.

The optical sheet 1051 is disposed between the display panel 1061 andthe light guide plate 1041 and includes at least one transmissive sheet.For example, the optical sheet 1051 includes at least one selected fromthe group consisting of a diffusion sheet, a horizontal and verticalprism sheet, and a brightness enhanced sheet. The diffusion sheetdiffuses the incident light, the horizontal and vertical prism sheetconcentrates the incident light onto the display panel 1061, and thebrightness enhanced sheet improves the brightness by reusing the lostlight. In addition, a protective sheet can be disposed on the displaypanel 1061, but the embodiment is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 can be disposed inthe light path of the light emitting module 1031 as optical members, butthe embodiment is not limited thereto.

FIG. 43 is a sectional view showing a display apparatus according to theembodiment.

Referring to FIG. 43, the display device 1100 includes a bottom cover1152, a board 1120 on which the light emitting device 100 are arrayed,an optical member 1154, and a display panel 1155.

The board 1120 and the light emitting device 100 may constitute thelight emitting module 1160. In addition, the bottom cover 1152, at leastone light emitting module 1160, and the optical member 1154 mayconstitute the light unit. The bottom cover 1151 can be disposed with areceiving section 1153, but the embodiment is not limited thereto. Thelight emitting module 1160 includes a board 1120, and a plurality oflight emitting devices 100 arranged on the board 1120 or a lightemitting device 100.

The optical member 1154 may include at least one selected from the groupconsisting of a lens, a light guide plate, a diffusion sheet, ahorizontal and vertical prism sheet, and a brightness enhanced sheet.The light guide plate may include PC or PMMA (Poly methyl methacrylate).The light guide plate can be omitted. The diffusion sheet diffuses theincident light, the horizontal and vertical prism sheet concentrates theincident light onto a display region, and the brightness enhanced sheetimproves the brightness by reusing the lost light.

The optical member 1154 is disposed above the light emitting module 1160in order to convert the light emitted from the light emitting module1160 into the surface light.

FIG. 44 is an exploded perspective view showing of a lighting unithaving the light emitting device according to the embodiment.

Referring to FIG. 44, the lighting unit 1500 may include a case 1510, alight emitting module 1530 including in the case 1510, and a connectionterminal 1520 including in the case 1510 and supplied with an electricpower from an external power supply.

The case 1510 may be preferably formed of a material having good heatshielding characteristics, for example, a metal material or a resinmaterial.

The light emitting module 1530 may include a board 1532, and at leastone light emitting device 100 according to the embodiments mounted onthe board 1532. The light emitting device 100 may include a plurality oflight emitting device packages which are arrayed apart by apredetermined distance from one another in a matrix configuration.

The board 1532 may be an insulator substrate on which a circuit patternis printed, and may include, for example, a printed circuit board (PCB),a metal core PCB, a flexible PCB, a ceramic PCB, an FR-4 substrate, etc.

Also, the board 1532 may be formed of a material to efficiently reflectlight, and a surface thereof may be formed in a color capable ofefficiently reflecting light, for example, white color, or silver color.

The at least one light emitting device 100 may be mounted on the board1532. Each of the light emitting devices 100 may include at least onelight emitting diode (LED) chip. The LED chip may include a color LEDemitting red, green, blue or white light, and a UV LED emittingultraviolet (UV).

The light emitting module 1530 may have a combination of various lightemitting devices so as to obtain desired color and luminance. Forexample, the light emitting module 1530 may have a combination of awhite LED, a red LED, and a green LED so as to obtain a high colorrendering index (CRI).

The connection terminal 1520 may be electrically connected to the lightemitting module 1530 to supply power. The connection terminal 1520 maybe screwed and coupled to an external power in a socket type, but thepresent disclosure is not limited thereto. For example, the connectionterminal 1520 may be made in a pin type and inserted into an externalpower, or may be connected to the external power through a power line.

A method of manufacturing a light emitting device according to theembodiment includes the steps of forming a light emitting structureincluding a first conductive semiconductor layer, an active layer and asecond first conductive semiconductor layer on a substrate; etching thelight emitting structure such that the first conductive semiconductorlayer is partially exposed; forming a reflective electrode layer on thelight emitting structure; forming an insulating layer on the reflectiveelectrode layer and the light emitting structure; forming a firstelectrode on the first conductive semiconductor layer and forming asecond electrode on the reflective electrode layer; forming a firstconnection electrode on the first electrode and forming a secondconnection electrode on the second electrode; forming a support layer onthe insulating layer such that the support layer has a heightcorresponding to a top surface of the first and second connectionelectrodes; removing the substrate after the support member has beenformed; and etching a top surface of the light emitting structure wherethe substrate is removed to form a third pattern portion having at leastone of a concave shape and a convex shape and a fourth pattern portionhaving a micro concavo-convex structure with a width smaller than awidth of a protrusion of the third pattern portion on the top surface ofthe light emitting structure and on the protrusion, wherein aceramic-based thermal diffusion agent is formed in the support member.

A method of manufacturing a light emitting device according to theembodiment includes the steps of forming a light emitting structureincluding a first conductive semiconductor layer, an active layer and asecond first conductive semiconductor layer on a substrate; etching thelight emitting structure such that the first conductive semiconductorlayer is partially exposed; forming a reflective electrode layer on thelight emitting structure; forming an insulating layer on the reflectiveelectrode layer and the light emitting structure; forming a firstelectrode on the first conductive semiconductor layer and forming asecond electrode on the reflective electrode layer; forming a firstconnection electrode on the first electrode and forming a secondconnection electrode on the second electrode; forming a support layer onthe insulating layer such that the support layer has a heightcorresponding to a top surface of the first and second connectionelectrodes; and etching a bottom surface of the substrate to form afirst pattern portion having at least one of a concave shape and aconvex shape and a second pattern portion having a micro concavo-convexstructure with a size smaller than a size of the first pattern portionon a top surface of the substrate and the first pattern portion, whereina ceramic-based thermal diffusion agent is formed in the support member.

The embodiment has the following effects. According to the embodiment,the mounting process for the light emitting device can be improved inthe flip mounting scheme. According to the embodiment, the lightemitting device is packaged in the wafer level, so that the packagingprocess can be omitted, thereby reducing the manufacturing steps.According to the embodiment, the light extraction efficiency of thelight emitting device can be improved. According to the embodiment, thelight dissipation efficiency of the light emitting device can beimproved. According to the embodiment, concavo-convex structures havingdifferent sizes from each other are disposed on the top surface of thesubstrate so that the light extraction efficiency can be improved.According to the embodiment, concavo-convex structures having differentsizes from each other are disposed on the top surface of the lightemitting structure so that the light extraction efficiency can beimproved. According to the embodiment, the reliability of the lightemitting apparatus having the light emitting device, which is mountedthrough the flip scheme, the display device and the lighting device canbe improved.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device comprising: atransmissive substrate; a first pattern portion disposed on a topsurface of the transmissive substrate and including a plurality ofprotrusions that protrude from the top surface; a second pattern portiondisposed on the top surface of the transmissive substrate and includinga plurality of concaves each of which has a width smaller than a widthof each of the plurality of protrusions; a phosphor layer on thetransmissive substrate; a light emitting structure disposed under thetransmissive substrate and including a first conductive semiconductorlayer, a second conductive semiconductor layer and an active layerbetween the first conductive semiconductor layer and the secondconductive semiconductor layer, wherein the phosphor layer is on the topsurface of the transmissive substrate, the phosphor layer directlycontacts a lateral side of the second conductive semiconductor layer,the phosphor layer directly contacts a lateral side of the active layer,and the phosphor layer directly contacts a lateral side of the firstconductive semiconductor layer; a first electrode under the firstconductive semiconductor layer; a reflective electrode layer under thesecond conductive semiconductor layer, wherein a width of the reflectiveelectrode layer is less than a width of the second conductivesemiconductor layer; a second electrode under the reflective electrodelayer; a first connection electrode under the first electrode; a secondconnection electrode under the second electrode; an insulating supportmember disposed around the first electrode and the first connectionelectrode and around the second electrode and the second connectionelectrode and including a ceramic-based thermal diffusion agent; aninsulating layer between the insulating support member and thereflective electrode layer; and a transmissive resin layer between thetransmissive substrate and the phosphor layer, the transmissive resinlayer includes a resin material having a refractive index lower than thetransmissive substrate, the transmissive resin layer contacting theprotrusions and disposed in the concaves, wherein the first connectionelectrode and the second connection electrode are overlapped with thefirst conductive semiconductor layer in a vertical direction, wherein athickness of the insulating support member is greater than a thicknessof the insulating layer in the vertical direction, wherein theinsulating support member contacts a lateral surface of the firstelectrode, a lateral surface of the second electrode, a lateral surfaceof the first connection electrode and a lateral surface of the secondconnection electrode, wherein a bottom surface of the insulating supportmember is aligned on a same horizontal plane with a bottom surface ofthe first connection electrode and a bottom surface of the secondconnection electrode, wherein the first connection electrode has a firstheight, the second connection electrode has a second height, and thefirst height is greater than the second height, wherein a width of thefirst electrode is equal to a width of the first connection electrode,and a width of the second electrode is equal to a width of the secondconnection electrode, wherein the lateral surface of the secondelectrode contacts both the insulating support member and the insulatinglayer, and wherein the insulating support member includes a firstsupport member around a perimeter of the first connection electrode anda second support member around the perimeter of the second connectionelectrode, wherein the first support member is spaced apart from thesecond support member by a division slot filled with an insulatingmaterial.
 2. The light emitting device of claim 1, wherein the pluralityof concaves are disposed on the protrusions, respectively.
 3. The lightemitting device of claim 1, wherein the plurality of protrusions have ahemispheric shape.
 4. The light emitting device of claim 1, wherein theplurality of protrusions are aligned at a regular interval and theconcaves are aligned at an irregular interval.
 5. The light emittingdevice of claim 1, wherein each of the plurality of concaves has a widthcorresponding to 50% or less based on the width of each of the pluralityof protrusions.
 6. The light emitting device of claim 5, wherein thewidth of each of the plurality of protrusions is in a range of 0.1 μm to10 μm.
 7. The light emitting device of claim 1, wherein a top surface ofthe phosphor layer includes roughness.
 8. The light emitting device ofclaim 1, wherein the ceramic-based thermal diffusion agent comprises atleast one of oxide, nitride, fluoride and sulfide including at least oneof Al, Cr, Si, Ti, Zn and Zr.
 9. The light emitting device of claim 1,wherein the reflective electrode layer comprises: a contact layer thatcontacts the light emitting structure; a reflective layer under thecontact layer; and a first diffusion barrier layer under the reflectivelayer, wherein the first electrode comprises: a first adhesive layerbonded under the first diffusion barrier layer; a second diffusionbarrier layer under the first adhesive layer; and a first bonding layerunder the second diffusion barrier layer.
 10. The light emitting deviceof claim 1, further comprising: a first electrode bonding layer bondedbetween the first electrode and the first connection electrode; and asecond electrode bonding layer bonded between the second electrode andthe second connection electrode.
 11. The light emitting device of claim10, wherein the first electrode bonding layer comprises: a first bondingelectrode bonded to the first electrode; and a second bonding electrodebonded between the first connection electrode and the first bondingelectrode, and the second electrode bonding layer comprises: a thirdbonding electrode bonded to the second electrode; and a fourth bondingelectrode bonded between the second connection electrode and the thirdbonding electrode.
 12. The light emitting device of claim 1, wherein thefirst support member is not overlapped with the active layer in thevertical direction.
 13. The light emitting device of claim 1, whereinthe first pattern portion and the second pattern portion are between thetransmissive substrate and the phosphor layer.
 14. The light emittingdevice of claim 1, further comprising a first semiconductor layerbetween the transmissive substrate and the first conductivesemiconductor layer.
 15. The light emitting device of claim 14, whereinthe first semiconductor layer is a buffer layer.
 16. The light emittingdevice of claim 1, wherein a top surface of the phosphor layer includesa light extracting structure.
 17. A light emitting apparatus comprising:a light emitting device including a support member formed at a lowerportion of the light emitting device and a first connection electrodeand a second connection electrode exposed to a bottom surface of thesupport member; a plurality of lead frames on which the first connectionelectrode and the second connection electrode of the light emittingdevice are mounted; and a body on which the lead frames are installed,wherein the light emitting device comprises: a transmissive substrate; afirst pattern portion disposed on a top surface of the transmissivesubstrate and including a plurality of protrusions that protrude fromthe top surface; a second pattern portion disposed on the top surface ofthe transmissive substrate and including a plurality of concaves each ofwhich has a width smaller than a width of each of the plurality ofprotrusions; a light emitting structure disposed under the transmissivesubstrate and including a first conductive semiconductor layer, a secondconductive semiconductor layer and an active layer between the firstconductive semiconductor layer and the second conductive semiconductorlayer; a first electrode between the first conductive semiconductorlayer and the first connection electrode; a reflective electrode layerunder the second conductive semiconductor layer, wherein a width of thereflective electrode layer is less than a width of the second conductivesemiconductor layer; a second electrode between the reflective electrodelayer and the second connection electrode; a phosphor layer on thetransmissive substrate, wherein the phosphor layer is on the top surfaceof the transmissive substrate, the phosphor layer directly contacts alateral side of the second conductive semiconductor layer, the phosphorlayer directly contacts a lateral side of the active layer, and thephosphor layer directly contacts a lateral side of the first conductivesemiconductor layer; and a transmissive resin layer between thetransmissive substrate and the phosphor layer, the transmissive resinlayer includes a resin material having a refractive index lower than thetransmissive substrate, the transmissive resin layer contacting theprotrusions and disposed in the concaves, wherein the support member isdisposed around the first electrode and the first connection electrodeand around the second electrode and the second connection electrode andincluding a ceramic-based thermal diffusion agent, and wherein the firstconnection electrode and the second connection electrode of the lightemitting device and the bottom surface of the support member have anidentical interval from top surfaces of the plurality of lead frames,wherein the bottom surface of the support member is aligned on a samehorizontal plane with a bottom surface of the first connection electrodeand a bottom surface of the second connection electrode, wherein thefirst connection electrode has a first height, the second connectionelectrode has a second height, and the first height is greater than thesecond height, wherein a width of the first electrode is equal to awidth of the first connection electrode, and a width of the secondelectrode is equal to a width of the second connection electrode, andwherein the support member contacts a lateral surface of the firstelectrode, the support member contacts a lateral surface of the secondelectrode, the support member contacts a lateral surface of the firstconnection electrode and the support member contacts a lateral surfaceof the second connection electrode, and wherein the support memberincludes a first support member around a perimeter of the firstconnection electrode and a second support member around the perimeter ofthe second connection electrode, wherein the first support member isspaced apart from the second support member by a division slot filledwith an insulating material.
 18. The light emitting device of claim 17,wherein the phosphor layer includes a lateral portion that contacts alateral surface of the transmissive substrate, wherein the supportmember is not overlapped with the lateral portion of the phosphor layerin the vertical direction.
 19. The light emitting device of claim 17,wherein the first pattern portion and the second pattern portion arebetween the transmissive substrate and the phosphor layer.